Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device

ABSTRACT

Provided are an active-light-sensitive or radiation-sensitive resin composition having high DOF and excellent LWR, a pattern forming method using the composition, and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having a group that decomposes by the action of an acid to generate a polar group, including at least a specific repeating unit (a1) represented by General Formula (1); a repeating unit (b1) having at least one of a lactone structure, a sultone structure, or a carbonate structure; and a repeating unit (b2) having at least one of a lactone structure, a sultone structure, or a carbonate structure, which is different from the repeating unit (b1), the Ohnishi parameter of the repeating unit (b1) is larger than the Ohnishi parameter of the repeating unit (b2), and the difference between both the Ohnishi parameters is 0.85 or more.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of PCT International Application No.PCT/JP2015/068680 filed on Jun. 29, 2015, which claims priority under 35U.S.C. § 119(a) to Japanese Patent Application No. 2014-141504 filed onJul. 9, 2014. The above application is hereby expressly incorporated byreference, in its entirety, into the present application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an active-light-sensitive orradiation-sensitive resin composition, a pattern forming method, and amethod for manufacturing an electronic device. More specifically, thepresent invention relates to a pattern forming method which is suitablefor a process for manufacturing a semiconductor such as an integratedcircuit (IC), a process for manufacturing a circuit board for a liquidcrystal, a thermal head, or the like, and other lithographic processesfor photofabrication; and an active-light-sensitive orradiation-sensitive resin composition (resist composition) usedtherefor. The present invention further relates to a method formanufacturing an electronic device, including the pattern formingmethod.

2. Description of the Related Art

In the related art, in processes for manufacturing semiconductor devicessuch as an IC and a large-scale integration (LSI), fine processing bylithography using a resist composition has been carried out, and thus,various resist compositions have been proposed (see, for example,JP2013-105165A and JP2013-057925A).

SUMMARY OF THE INVENTION

In recent years, high levels of functions have been required for varioustypes of electronic equipment, and correspondingly, additionalimprovement of characteristics of resist compositions for use in fineprocessing is required. In particular, additional improvement of depthof focus (DOF) and line width roughness (LWR) is required.

Under these circumstances, the present inventors have investigated theresist compositions described in JP2013-105165A and JP2013-057925A, andthus, it has been clarified that the DOF and the LWR do not necessarilymeet the recently required levels.

Taking into consideration these problems, the present invention has beenmade, and has an object to provide an active-light-sensitive orradiation-sensitive resin composition having high DOF and excellent LWR,a pattern forming method using the composition, and a method formanufacturing an electronic device.

The present inventors have conducted extensive studies, and as a result,they have found that the tasks can be accomplished by adjusting adifference in Ohnishi parameters among specific repeating units includedin a resin to a specific value or more.

That is, the present invention provides (1) to (13) below.

(1) An active-light-sensitive or radiation-sensitive resin compositioncomprising a resin (P); and a compound that generates an acid uponirradiation with active light or radiation, in which the resin (P)includes a repeating unit (a) having a group that decomposes by theaction of an acid to generate a polar group, including at least arepeating unit (a1) represented by General Formula (1) which will bedescribed later; a repeating unit (b1) having at least one of a lactonestructure, a sultone structure, or a carbonate structure; and arepeating unit (b2) having at least one of a lactone structure, asultone structure, or a carbonate structure, which is different from therepeating unit (b1), the Ohnishi parameter of the repeating unit (b1) islarger than the Ohnishi parameter of the repeating unit (b2), and thedifference between both the Ohnishi parameters is 0.85 or more.

(2) The active-light-sensitive or radiation-sensitive resin compositionas described in (1), in which the Ohnishi parameter of the repeatingunit (b1) is 4.50 or more.

(3) The active-light-sensitive or radiation-sensitive resin compositionas described in (1) or (2), in which the Ohnishi parameter of therepeating unit (b2) is 4.00 or less.

(4) The active-light-sensitive or radiation-sensitive resin compositionas described in any one of (1) to (3), in which the repeating unit (b1)and the repeating unit (b2) are each a repeating unit derived from a(meth)acrylic acid derivative monomer.

(5) The active-light-sensitive or radiation-sensitive resin compositionas described in any one of (1) to (4), in which the positive integerrepresented by n in General Formula (1) is 1.

(6) The active-light-sensitive or radiation-sensitive resin compositionas described in any one of (1) to (5), in which R₂ in General Formula(1) represents a tertiary alkyl group.

(7) The active-light-sensitive or radiation-sensitive resin compositionas described in any one of (1) to (6), in which the content of therepeating units (a1) with respect to all the repeating units of theresin (P) is 30% to 70% by mole.

(8) The active-light-sensitive or radiation-sensitive resin compositionas described in any one of (1) to (7), in which the content of therepeating units (a1) with respect to all the repeating units of theresin (P) is 40% to 60% by mole.

(9) The active-light-sensitive or radiation-sensitive resin compositionas described in any one of (1) to (8), in which the repeating unit (b2)is a repeating unit represented by General Formula (2) which will bedescribed later.

(10) The active-light-sensitive or radiation-sensitive resin compositionas described in any one of (1) to (9), in which the repeating unit (b1)is a repeating unit having a monocyclic lactone structure.

(11) A pattern forming method comprising at least (i) a step of formingan active-light-sensitive or radiation-sensitive resin composition filmon a substrate, using the active-light-sensitive or radiation-sensitiveresin composition as described in any one of (1) to (10); (ii) a step ofirradiating the film with active light or radiation; and (iii) a step ofdeveloping the film irradiated with active light or radiation using adeveloper.

(12) The pattern forming method as described in (11), in which thedeveloper is a developer including an organic solvent.

(13) A method for manufacturing an electronic device, comprising thepattern forming method as described in (11) or (12).

As described below, according to the present invention, it is possibleto provide an active-light-sensitive or radiation-sensitive resincomposition having high DOF and excellent LWR, a pattern forming methodusing the composition, and a method for manufacturing an electronicdevice.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, suitable aspects of the present invention will be describedin detail.

In citations for a group and an atomic group in the presentspecification, in a case where the group is denoted without specifyingwhether it is substituted or unsubstituted, the group includes both agroup and an atomic group not having a substituent, and a group and anatomic group having a substituent. For example, an “alkyl group” whichis not denoted about whether it is substituted or unsubstituted includesnot only an alkyl group not having a substituent (unsubstituted alkylgroup), but also an alkyl group having a substituent (substituted alkylgroup).

In the present invention, “active light” or “radiation” means, forexample, a bright line spectrum of a mercury lamp, far ultraviolet raysrepresented by an excimer laser, extreme ultraviolet rays (EUV light),X-rays, particle rays such as electron beams and ion beams, or the like.In addition, in the present invention, “light” means active light orradiation.

Furthermore, “exposure” in the present specification includes, unlessotherwise specified, not only exposure by a mercury lamp, farultraviolet rays represented by an excimer laser, X-rays, extremeultraviolet rays (EUV light), or the like, but also writing by particlerays such as electron beams and ion beams.

In the present specification, “(meth)acrylate” represents “at least oneof acrylate and methacrylate”.

In the present specification, “(a value) to (a value)” means a rangeincluding the numerical values described before and after “to” as alower limit value and an upper limit value, respectively.

The active-light-sensitive or radiation-sensitive resin composition ofthe present invention (hereinafter also referred to as “the compositionof the present invention” or “the resist composition of the presentinvention”) contains a resin (P), and a compound that generates an acidupon irradiation with active light or radiation, in which the resin (P)includes a repeating unit (a) having a group that decomposes by theaction of an acid to generate a polar group, including at least arepeating unit (a1) represented by General Formula (1) which will bedescribed later, a repeating unit (b1) having a lactone structure andthe like, and a repeating unit (b2) having a lactone structure and thelike, which is different from the repeating unit (b1), the Ohnishiparameter of the repeating unit (b1) is larger than the Ohnishiparameter of the repeating unit (b2), and the difference between boththe Ohnishi parameters is 0.85 or more.

The composition of the present invention can accomplish desired effectsby taking such a configuration. The reason therefor is not clear, but isapproximately presumed as follows.

Generally, if a film (resist film) formed from a composition containinga resin and a compound that generates an acid upon irradiation withactive light or radiation (acid generator) is exposed, an acid isgenerated from the acid generator, and the generated acid changes thesolubility of the resin in a developer.

In the composition of the present invention, it is considered that byincorporating the repeating unit (b1) and the repeating unit (b2), whoseproperties are different from each other, into the resin (P), thepermission of a resist film to exposure and a developer increases, andas a result, high DOF and excellent LWR are exhibited.

This is also predicted from the comparison results between Examples andComparative Examples which will be described later.

Hereinafter, the composition of the present invention will be described.

The composition of the present invention may be used in negative typedevelopment (development in which an exposed area remains as a patternand an unexposed area is removed), or may also be used in positive typedevelopment (development in which an exposed area is removed, and anunexposed area remains as a pattern). That is, development may also becarried out using any one of a developer including an organic solventand an alkali developer.

Furthermore, the composition of the present invention is typically achemical amplification type resist composition.

First, the respective components contained in the composition of thepresent invention will be described, and then a pattern forming methodusing the composition of the present invention will be described indetail.

[1] Resin (P)

The resin (P) includes a repeating unit (a) having a group thatdecomposes by the action of an acid to generate a polar group, includingat least a repeating unit (a1) represented by General Formula (1) whichwill be described later, a repeating unit (b1) having at least one of alactone structure, a sultone structure, or a carbonate structure, and arepeating unit (b2) having at least one of a lactone structure, asultone structure, or a carbonate structure, which is different from therepeating unit (b1).

In addition, the Ohnishi parameter of the repeating unit (b1) is largerthan the Ohnishi parameter of the repeating unit (b2), and thedifference between both the Ohnishi parameters is 0.85 or more.

[1-1] Repeating Unit (a) Having Acid-Decomposable Group

The repeating unit (a) included in the resin (P) is a repeating unit(hereinafter also referred to as an “acid-decomposable group”) having agroup that decomposes by the action of an acid to generate a polargroup, which includes at least a repeating unit (a1) which will bedescribed later.

The repeating unit (a) is not particularly limited as long as it is arepeating unit including the repeating unit (a1), but is preferably arepeating unit having a group that decomposes by the action of an acidto generate a carboxyl group.

Furthermore, the content of the repeating units (a) with respect to allthe repeating units of the resin (P) may be, for example, 30% to 70% bymole, and is preferably 35% to 70% by mole, and more preferably 40% to60% by mole.

[1-1-1] Repeating Unit (a1) Represented by General Formula (1)

The repeating unit (a1) is a repeating unit represented by the followingGeneral Formula (1), and usually decomposes by the action of an acid andhas a covalent bond between an oxygen atom and a quaternary carbon atomcleaved to generate a carboxyl group.

Here, in General Formula (1), R₁ represents a hydrogen atom or anorganic group, R₂ represents a secondary or tertiary alkyl group, nrepresents a positive integer, and * represents a binding position.

Examples of the organic group represented by R₁ in General Formula (1)include an alkyl group which may have a substituent such as a fluorineatom and a hydroxyl group, and as R₁, a hydrogen atom, a methyl group, atrifluoromethyl group, or a hydroxymethyl group is preferable.

Examples of the secondary alkyl group represented by R₂ in GeneralFormula (1) include an isopropyl group, an isobutyl group, and a1-ethylpentyl group.

Examples of the tertiary alkyl group represented by R₂ in GeneralFormula (1) include a tert-butyl group, a tert-amyl group, atriethylcarbyl group, a 1-ethylnorbornyl group, a 1-methylcyclohexylgroup, a 1-ethylcyclopentyl group, a 2-(2-methyl)adamantyl group, and a2-(2-ethyl)adamantyl group.

As the group represented by R₂ in General Formula (1), a tertiary alkylgroup is preferable, and a tert-butyl group or a tert-amyl group is morepreferable.

Examples of the positive integer represented by n in General Formula (1)include 1 to 8, and the integer is preferably 1 to 4, more preferably 1to 3, and particularly preferably 1.

In addition, in the monocyclic cycloalkyl group in General Formula (1),a hydrogen atom which can be substituted may be substituted with asubstituent.

Specific examples of the repeating unit (a1) represented by GeneralFormula (1) are shown below (in the following formulae, * representing abinding position is omitted). However, the present invention is notlimited thereto.

The repeating unit (a1) represented by General Formula (1) contained inthe resin (P) may be used singly or in combination of two or more kindsthereof.

In view of obtaining more excellent effects of the present invention,the content of the repeating unit (a1) represented by General Formula(1) with respect to all the repeating units of the resin (P) ispreferably 30% to 70% by mole, and more preferably 40% to 60% by mole.

Furthermore, the content of the repeating units (a1) in the repeatingunit (a) is preferably 60% by mole or more, more preferably 70% by moleor more, still more preferably 80% by mole or more, and particularlypreferably 90% by mole or more.

[1-1-2] Repeating Unit (a2)

The repeating unit (a) having an acid-decomposable group may include arepeating unit (a2) having an acid-decomposable group, which isdifferent from the repeating unit (a1), in addition to theabove-mentioned repeating unit (a1).

The acid-decomposable group preferably has a structure in which thealkali-soluble group is protected with a group that decomposes by theaction of an acid to leave.

Examples of the alkali-soluble group include a phenolic hydroxyl group,a carboxylic acid group, a fluorinated alcohol group, a sulfonic acidgroup, a sulfonamido group, a sulfonylimido group, an(alkylsulfonyl)(alkylcarbonyl)methylene group, an(alkylsulfonyl)(alkylcarbonyl)imido group, a bis(alkylcarbonyl)methylenegroup, a bis(alkylcarbonyl)imido group, a bis(alkylsulfonyl)methylenegroup, a bis(alkylsulfonyl)imido group, a tris(alkylcarbonyl)methylenegroup, and a tris(alkylsulfonyl)methylene group.

Preferred examples of the alkali-soluble group include a carboxyl group,a fluorinated alcohol group (preferably a hexafluoroisopropanol group),and a sulfonic acid group, with a carboxyl group being more preferable.

A preferred acid-decomposable group is a group obtained by substitutinga hydrogen atom of these alkali-soluble groups with a group that leavesby the action of an acid.

Examples of the group that leaves by the action of an acid include—C(R₃₆)(R₃₇)(R₃₈), —C(R₃₆)(R₃₇)(OR₃₉), and —C(R₀₁)(R₀₂)(OR₃₉).

In Formulae, R₃₆ to R₃₉ each independently represent an alkyl group, acycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group.R₃₆ and R₃₇ may be bonded to each other to form a ring.

R₀₁ and R₀₂ each independently represent a hydrogen atom, an alkylgroup, a cycloalkyl group, an aryl group, an aralkyl group, or analkenyl group.

The acid-decomposable group is preferably a cumyl ester group, an enolester group, an acetal ester group, a tertiary alkyl ester group, or thelike, and more preferably a tertiary alkyl ester group.

As a repeating unit (a2) having the acid-decomposable group, a repeatingunit represented by the following General Formula (AI) is preferable.

In General Formula (AI),

Xa₁ represents a hydrogen atom or an alkyl group which may have asubstituent.

T represents a single bond or a divalent linking group.

Rx₁ to Rx₃ each independently represent an (linear or branched) alkylgroup or a (monocyclic or polycyclic) cycloalkyl group. Here, in a casewhere all of Rx₁ to Rx₃ are (linear or branched) alkyl groups, at leasttwo of Rx₁ to Rx₃ are preferably methyl groups.

Two members out of Rx₁ to Rx₃ may be bonded to each other to form a(monocyclic or polycyclic) cycloalkyl group.

Examples of the alkyl group which may have a substituent, represented byXa₁, include a methyl group and a group represented by —CH₂—R₁₁. R₁₁represents a halogen atom (a fluorine atom or the like), a hydroxylgroup, or a monovalent organic group, and examples thereof include analkyl group having 5 or less carbon atoms, and an acyl group having 5 orless carbon atoms. R₁₁ is preferably an alkyl group having 3 or lesscarbon atoms, and more preferably a methyl group. In one aspect, Xa₁ ispreferably a hydrogen atom, a methyl group, a trifluoromethyl group, ahydroxymethyl group, or the like.

Examples of the divalent linking group of T include an alkylene group, a—COO-Rt- group, and an —O-Rt- group. In the formulae, Rt represents analkylene group or a cycloalkylene group.

T is preferably a single bond or a —COO-Rt- group. Rt is preferably analkylene group having 1 to 5 carbon atoms, and more preferably a —CH₂—group, a —(CH₂)₂— group, or a —(CH₂)₃— group.

As the alkyl group of Rx₁ to Rx₃, alkyl groups having 1 to 4 carbonatoms, such as a methyl group, an ethyl group, an n-propyl group, anisopropyl group, an n-butyl group, an isobutyl group, and a t-butylgroup are preferable.

As the cycloalkyl group of Rx₁ to Rx₃, monocyclic cycloalkyl groups suchas a cyclopentyl group and a cyclohexyl group, and polycyclic cycloalkylgroups such as a norbornyl group, a tetracyclodecanyl group, atetracyclododecanyl group, and an adamantyl group are preferable.

As the cycloalkyl group formed by the bonding of two members out of Rx₁to Rx₃, monocyclic cycloalkyl groups such as a cyclopentyl group and acyclohexyl group, and polycyclic cycloalkyl groups such as a norbornylgroup, a tetracyclodecanyl group, a tetracyclododecanyl group, and anadamantyl group are preferable, and monocyclic cycloalkyl groups having5 or 6 carbon atoms are particularly preferable.

In the cycloalkyl group formed by the bonding of two members out of Rx₁to Rx₃, for example, one of the methylene groups constituting the ringmay be substituted with a hetero atom such as an oxygen atom, or with agroup having a hetero atom, such as a carbonyl group.

For the repeating unit represented by General Formula (AI), for example,an aspect in which Rx₁ is a methyl group or an ethyl group, and Rx₂ andRx₃ are bonded to form the aforementioned cycloalkyl group, ispreferable.

Each of the groups may have a substituent, and examples of thesubstituent include an alkyl group (having 1 to 4 carbon atoms), ahalogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbonatoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6carbon atoms), with those having 8 or less carbon atoms beingpreferable.

Specific examples of the preferred repeating unit (a2) having anacid-decomposable group are shown below, but the present invention isnot limited thereto.

In the specific examples, Rx and Xa₁ each represent a hydrogen atom,CH₃, CF₃, or CH₂OH. Rxa and Rxb each represent an alkyl group having 1to 4 carbon atoms. Z represents a substituent including a polar group,and in a case where Z's are present in plural numbers, they may be thesame as or different from each other. p represents 0 or a positiveinteger. Examples of the substituent including a polar group,represented by Z, include a hydroxyl group, a cyano group, an aminogroup, a linear or branched alkyl group having an alkylamido group or asulfonamido group, and a cycloalkyl group, with an alkyl group having ahydroxyl group being preferable. As the branched alkyl group, anisopropyl group is particularly preferable.

The repeating unit (a2) contained in the resin (P) may be used singly orin combination of two or more kinds thereof.

The content of the repeating agents (a2) with respect to all therepeating units of the resin (P) is preferably 0% to 30% by mole, andmore preferably 0% to 20% by mole.

[1-2] Repeating Unit (b1) and Repeating Unit (b2)

The resin (P) includes a repeating unit (b1) and a repeating unit (b2),in addition to the repeating unit (a1) represented by General Formula(1).

The repeating unit (b1) and the repeating unit (b2) are both repeatingunits having at least one of a lactone structure, a sultone (cyclicsulfonic ester) structure, or a carbonate structure (cyclic carbonicester structure), but they are different from each other.

For example, with respect to the repeating unit (b1) and the repeatingunit (b2), the former has a lactone structure, while the latter has acarbonate structure, or both of them have lactone structures, but thelactone structures are different from each other.

In addition, with respect to the repeating unit having a lactonestructure or a sultone structure, and the repeating unit having acarbonate structure, suitable aspects will be described in detail later.

Moreover, in the present invention, the Ohnishi parameter of therepeating unit (b1) is larger than the Ohnishi parameter of therepeating unit (b2), and the difference (hereinafter also denoted as an“ΔOhnishi P”) between the Ohnishi parameter of the repeating unit (b1)and the Ohnishi parameter of the repeating unit (b2) is 0.85 or more.

Here, the Ohnishi parameter is represented by the following equation andgenerally known as a factor of etching resistance of a resist, and asmaller value of the Ohnishi parameter is considered to indicate betteretching resistance. However, the present inventors have found that bysetting the difference in Ohnishi parameters between the repeating unit(b1) and the repeating unit (b2) to a certain value or more, the DOF andthe LWR can be unexpectedly excellent.Ohnishi parameter=(the total number of atoms in a compound)/(the numberof carbon atoms in the compound−the number of oxygen atoms in thecompound)

In view of obtaining more excellent effects of the present invention,the difference (ΔOhnishi P) in Ohnishi parameters between the repeatingunit (b1) and the repeating unit (b2) is preferably 1.00 or more, morepreferably 1.20 or more, still more preferably 1.40 or more,particularly preferably 1.60 or more, and most preferably 1.80 or more.On the other hand, the upper limit value is not particularly limited,but it may be, for example, 5.00 or less, and is preferably 4.50 orless, and more preferably 4.00 or less.

Moreover, the Ohnishi parameter of each of the repeating unit (b1) andthe repeating unit (b2) is not particularly limited, but the Ohnishiparameter of the repeating unit (b1) is preferably 4.50 or more, morepreferably 4.80 or more, and still more preferably 5.00 or more.

In addition, for the same reason, the Ohnishi parameter of the repeatingunit (b2) is preferably 4.00 or less, more preferably 3.80 or less,still more preferably 3.70 or less, and particularly preferably 3.60 orless.

Here, examples of the repeating unit having a lactone structure, asultone structure, or a carbonate structure are shown in Table 1 below,together the Ohnishi parameters. Here, the repeating unit (b1) and therepeating unit (b2) are not limited to those described in Table 1 below.

TABLE 1 Repeating Number of atoms Ohnishi unit C H O Others Sum P  (1)14 20 4 0 38 3.80  (2) 13 18 4 0 35 3.89  (3) 15 22 4 0 41 3.73  (4) 1624 4 0 44 3.67  (5) 15 22 4 0 41 3.73  (6) 13 20 4 0 37 4.11  (7) 14 224 0 40 4.00  (8) 13 18 5 0 36 4.50  (9) 15 19 4 1 39 3.55 (10) 16 22 6 044 4.40 (11) 15 22 4 0 41 3.73 (12) 14 22 4 0 40 4.00 (13) 15 22 4 0 413.73 (14) 20 28 4 0 52 3.25 (15) 13 20 4 0 37 4.11 (16) 12 18 4 0 344.25 (17) 21 30 6 0 57 3.80 (18) 12 20 4 0 36 4.50 (19) 16 24 4 0 443.67 (20) 16 24 5 0 45 4.09 (21) 17 28 5 0 50 4.17 (22) 18 28 4 0 503.57 (23) 11 18 4 0 33 4.71 (24) 11 18 3 0 32 4.00 (25) 18 26 6 0 504.17 (26) 18 20 6 6 50 4.17 (27) 13 20 5 1 39 4.88 (28) 12 20 3 0 353.89 (29) 12 20 4 0 36 4.50 (30) 10 16 4 0 30 5.00 (31) 16 22 6 0 444.40 (32) 17 21 6 1 45 4.09 (33) 15 20 6 0 41 4.56 (34) 10 16 5 0 316.20

As seen from the Ohnishi parameters shown in Table 1, in the presentinvention, the Ohnishi parameters of the repeating unit are calculatedunder the condition that methyl groups are present at both the terminalbinding positions of the repeating unit. For example, for the repeatingunits represented by Formula (30) in Table 1 below shown, when both theterminal binding positions represented by * do not have an atom, agroup, and an atomic group, the number of carbon atoms is 8, and thenumber of hydrogen atoms is 10. However, in the present invention, thecalculation is conducted under the condition that methyl groups arepresent at both the terminal binding positions represented by *, andthus, the number of carbon atoms is 10 and the number of hydrogen atomsis 16 (see Table 1).

Furthermore, the repeating unit (b1) and the repeating unit (b2) are notparticularly limited as long as they are each a repeating unit having atleast one of a lactone structure, a sultone structure, or a carbonatestructure, but are each preferably a repeating unit derived from a(meth)acrylic acid derivative monomer.

The total content of the repeating units (b1) and the repeating unit(b2) with respect to all the repeating units in the resin (P) may be,for example, 3% to 80% by mole, and is preferably 3% to 60% by mole, andmore preferably 10% to 60% by mole.

Furthermore, the molar ratio (b1/b2) of the repeating unit (b1) to therepeating unit (b2) in the resin (P) is not particularly limited, but ispreferably 20/80 to 80/20, and more preferably 40/60 to 60/40.

Hereinafter, suitable aspects of the repeating unit (b1) and therepeating unit (b2) will be described.

[1-2-1] Repeating Unit Having Lactone Structure or Sultone Structure

The lactone structure or the sultone structure is preferably a 5- to7-membered ring lactone structure or a sultone structure, and is morepreferably a 5- to 7-membered ring lactone structure or sultonestructure to which another ring structure is fused so as to form abicyclo structure or a spiro structure. The resin still more preferablyhas a repeating unit having a lactone structure or a sultone structurerepresented by any one of the following General Formulae (LC1-1) to(LC1-17), (SL1-1), and (SL1-2). Further, the lactone structure or thesultone structure may be bonded directly to the main chain. The lactonestructures or the sultone structures are preferably (LC1-1), (LC1-4),(LC1-5), and (LC1-8), and more preferably (LC1-4). By using such aspecific lactone structure or sultone structure, LWR and developmentdefects are relieved.

The lactone structure moiety or the sultone structure moiety may or maynot have a substituent (Rb₂). Preferred examples of the substituent(Rb₂) include an alkyl group having 1 to 8 carbon atoms, a cycloalkylgroup having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbonatoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, a carboxylgroup, a halogen atom, a hydroxyl group, a cyano group, and anacid-decomposable group. Among these, an alkyl group having 1 to 4carbon atoms, a cyano group, and an acid-decomposable group are morepreferable. n₂ represents an integer of 0 to 4. When n₂ is 2 or more,the substituents (Rb₂) which are present in plural numbers may be thesame as or different from each other, and further, the substituents(Rb₂) which are present in plural numbers may be bonded to each other toform a ring.

It is preferable that the resin (P) contains a repeating unit having alactone structure or a sultone structure, represented by the followingGeneral Formula (III).

In Formula (III),

A represents an ester bond (a group represented by —COO—) or an amidebond (a group represented by —CONH—).

In a case where R₀'s are present in plural numbers, they eachindependently represent an alkylene group, a cycloalkylene group, or acombination thereof.

In a case where Z's are present in plural numbers, they eachindependently represent a single bond, an ether bond, an ester bond, anamide bond, a urethane bond

(a group represented by

or an urea bond(a group represented by

Here, R's each independently represent a hydrogen atom, an alkyl group,a cycloalkyl group, or an aryl group.

R₈ represents a monovalent organic group having a lactone structure or asultone structure.

n is the repetition number of the structure represented by —R₀—Z—, andrepresents an integer of 0 to 2.

R₇ represents a hydrogen atom, a halogen atom, or an alkyl group.

The alkylene group and the cycloalkylene group of R₀ may have asubstituent.

Z is preferably an ether bond or an ester bond, and particularlypreferably an ester bond.

The alkyl group of R₇ is preferably an alkyl group having 1 to 4 carbonatoms, more preferably a methyl group or an ethyl group, andparticularly preferably a methyl group. The alkylene group and thecycloalkylene group of R₀, and the alkyl group in R₇ may be eachsubstituted, and examples of the substituent include halogen atoms suchas a fluorine atom, a chlorine atom, and a bromine atom; a mercaptogroup; a hydroxy group; alkoxy groups such as a methoxy group, an ethoxygroup, an isopropoxy group, a t-butoxy group, and a benzyloxy group; andacyloxy groups such as an acetyloxy group and a propionyloxy group. R₇is preferably a hydrogen atom, a methyl group, a trifluoromethyl group,or a hydroxymethyl group.

The preferred chain alkylene group in R₀ is a chain alkylene group,preferably having 1 to 10 carbon atoms, and more preferably having 1 to5 carbon atoms, and examples thereof include a methylene group, anethylene group, and a propylene group. Preferred examples of thecycloalkylene group include a cycloalkylene group having 3 to 20 carbonatoms, and examples thereof include a cyclohexylene group, acyclopentylene group, a norbornylene group, and an adamantylene group.In order to express the effects of the present invention, a chainalkylene group is more preferable, and a methylene group is particularlypreferable.

The monovalent organic group having a lactone structure or sultonestructure represented by R₈ is not limited as long as it has the lactonestructure or sultone structure, specific examples thereof include theabove-mentioned lactone structures or sultone structures represented byGeneral Formula (LC1-1) to (LC1-17), (SL1-1), and (SL1-2), and amongthese, the structure represented by (LC1-4) is particularly preferable.Further, n₂ in (LC1-1) to (LC1-17), (SL1-1), and (SL1-2) is morepreferably 2 or less.

Furthermore, R₈ is preferably a monovalent organic group having anunsubstituted lactone structure or sultone structure, or a monovalentorganic group having a lactone structure or a sultone structure having amethyl group, a cyano group, or an alkoxycarbonyl group as asubstituent, and more preferably a monovalent organic group having alactone structure having a cyano group as a substituent (cyanolactone)or a sultone structure having a cyano group as a substituent(cyanosultone).

In General Formula (III), n is preferably 0.

Specific examples of the repeating unit having a group having a lactonestructure or a sultone structure, represented by General Formula (III),are shown below, but the present invention is not limited thereto.

In the following specific examples, R represents a hydrogen atom, analkyl group which may have a substituent, or a halogen atom, andpreferably a hydrogen atom, a methyl group, a hydroxymethyl group, or anacetoxymethyl group.

In the following Formulae, Me represents a methyl group.

As the repeating unit having a lactone structure or a sultone structure,a repeating unit represented by the following General Formula (III-1) or(III-1′) is more preferable.

In General Formulae (III-1) and (III-1′),

R₇, A, R₀, Z, and n have the same definitions as in General Formula(III).

R₇′, A′, R₀′, Z′, and n′ each have the same definitions as R₇, A, R₀, Z,and n, respectively, in General Formula (III).

In a case where R₉ are in plural numbers, they each independentlyrepresent an alkyl group, a cycloalkyl group, an alkoxycarbonyl group, acyano group, a hydroxyl group, or an alkoxy group, and in a case wherethey are in plural numbers, two R₉'s may be bonded to each other to forma ring.

In a case where R₉″s are in plural numbers, they each independentlyrepresent an alkyl group, a cycloalkyl group, an alkoxycarbonyl group, acyano group, a hydroxyl group, or an alkoxy group, and in a case wherethey are in plural numbers, two R₉″s may be bonded to each other to forma ring.

X and X′ each independently represent an alkylene group, an oxygen atom,or a sulfur atom.

m and m′ are each the number of substituents, and each independentlyrepresent an integer of 0 to 5. m and m′ are each independentlypreferably 0 or 1.

As the alkyl group of R₉ and R₉′, an alkyl group having 1 to 4 carbonatoms is preferable, a methyl group and an ethyl group are morepreferable, and a methyl group is most preferable. Examples of thecycloalkyl group include a cyclopropyl group, a cyclobutyl group, acyclopentyl group, and a cyclohexyl group. Examples of thealkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonylgroup, an n-butoxycarbonyl group, and a t-butoxycarbonyl group. Examplesof the alkoxy group include a methoxy group, an ethoxy group, a propoxygroup, an isopropoxy group, and a butoxy group. These groups may have asubstituent, and examples of the substituent include alkoxy groups suchas a hydroxy group, a methoxy group, and an ethoxy group, a cyano group,and halogen atoms such as a fluorine atom. R₉ and R₉′ are each morepreferably a methyl group, a cyano group, or an alkoxycarbonyl group,and still more preferably a cyano group.

Examples of the alkylene group of X and X′ include a methylene group andan ethylene group. X and X′ are preferably an oxygen atom or a methylenegroup, and more preferably a methylene group.

In a case where in and m′ are 1 or more, at least one of R₉ or R₉′ ispreferably substituted at the α- or β-position of the carbonyl group ofthe lactone, and particularly preferably at the α-position.

Specific examples of the group having a lactone structure or therepeating unit having a sultone structure, represented by GeneralFormula (III-1) or (III-1′), are shown, but the present invention is notlimited thereto. In the following specific examples, R represents ahydrogen atom, an alkyl group which may have a substituent, or a halogenatom, and preferably a hydrogen atom, a methyl group, a hydroxymethylgroup, or an acetoxymethyl group.

In a case where the repeating units are present in plural kinds, thecontent of the repeating units represented by General Formula (III) ispreferably 15% to 60% by mole, more preferably 20% to 60% by mole, andstill more preferably 30% to 50% by mole, with respect to all therepeating units in the resin (P).

The resin (P) may also contain the above-mentioned repeating unit havinga lactone structure or a sultone structure, in addition to the unitrepresented by General Formula (III).

Specific examples of the repeating unit having a lactone structure or asultone structure are shown below, but the present invention is notlimited thereto.

(in the formulae, Rx represents H, CH₃, CH₂OH, or CF₃)

(in the formulae, Rx represents H, CH₃, CH₂OH, or CF₃)

(in the formulae, Rx represents H, CH₃, CH₂OH, or CF₃)

Particularly preferred examples of the repeating units in the specificexamples include the following repeating units. By selecting optimallactone structures or sultone structures, a pattern profile and adensity dependence are improved.

(in the formulae, Rx represents H, CH₃, CH₂OH, or CF₃)

The repeating unit having a lactone structure or a sultone structureusually has an optical isomer, and any optical isomer may be used.Further, one kind of optical isomer may be used singly or a plurality ofoptical isomers may be mixed and used. In a case of mainly using onekind of optical isomer, the optical purity (ee) thereof is preferably90% or more, and more preferably 95% or more.

In a case where the repeating units are contained in plural kinds, thecontent of the repeating units having a lactone structure or a sultonestructure, other than the repeating units represented by General Formula(III), is preferably 15% to 60% by mole, more preferably 20% to 50% bymole, and still more preferably 30% to 50% by mole, in total withrespect to all the repeating units in the resin.

In order to enhance the effects of the present invention, it is alsopossible to use two or more kinds of the repeating units having alactone structure or a sultone structure selected from General Formula(III) in combination. In a case of using them in combination, it ispreferable to use two or more selected from the lactone or sultonerepeating units of General Formula (III) in which n is 1 in combination.

[1-2-2] Repeating Unit Having Carbonate Structure

The carbonate structure (cyclic carbonic ester structure) is a structurehaving a ring including a bond represented by —O—C(═O)—O— as an atomicgroup constituting the ring. The ring including a bond represented by—O—C(═O)—O— as an atomic group constituting the ring is preferably a 5-to 7-membered ring, and most preferably a 5-membered ring. Such a ringmay be fused with another ring to form a fused ring.

It is preferable that the resin (P) contains a repeating unitrepresented by the following General Formula (A-1) as a repeating unithaving a carbonate structure (cyclic carbonic ester structure).

In General Formula (A-1), R_(A) ¹ represents a hydrogen atom or an alkylgroup.

R_(A) ¹⁹'s each independently represent a hydrogen atom or a chainhydrocarbon group.

A represents a single bond, a divalent or trivalent chain hydrocarbongroup, a divalent or trivalent alicyclic hydrocarbon group, or adivalent or trivalent aromatic hydrocarbon group, and in a case where Ais trivalent, a carbon atom included in A are bonded to the carbon atomconstituting a cyclic carbonic ester to form a ring structure.

n_(A) represents an integer of 2 to 4.

In General Formula (A-1), R_(A) ¹ represents a hydrogen atom or an alkylgroup. The alkyl group represented by R_(A) ¹ may have a substituentsuch as a fluorine atom. R_(A) ¹ preferably represents a hydrogen atom,a methyl group, or a trifluoromethyl group, and more preferably a methylgroup.

R_(A) ¹⁹'s each independently represent a hydrogen atom or a chainhydrocarbon group. The chain hydrocarbon group represented by R_(A) ¹⁹is preferably a chain hydrocarbon group having 1 to 5 carbon atoms.Examples of the “chain hydrocarbon group having 1 to 5 carbon atoms”include linear alkyl groups having 1 to 5 carbon atoms, such as a methylgroup, an ethyl group, a propyl group, and a butyl group; and branchedalkyl groups having 3 to 5 carbon atoms, such as an isopropyl group, anisobutyl group, and a t-butyl group. The chain hydrocarbon groups mayhave a substituent such as a hydroxyl group.

R_(A) ¹⁹ most preferably represents a hydrogen atom.

In General Formula (A-1), n_(A) represents an integer of 2 to 4. Thatis, in a case of n=2 (an ethylene group), the cyclic carbonic ester is a5-membered ring structure; in a case of n=3 (a propylene group), thecyclic carbonic ester is a 6-membered ring structure; and in a case ofn=4 (a butylene group), the cyclic carbonic ester is a 7-membered ringstructure. For example, the repeating unit (A-1a) which will bedescribed later is a 5-membered ring structure, and (A-1j) is an exampleof the 6-membered ring structure.

n_(A) is preferably 2 or 3, and more preferably 2.

In General Formula (A-1), A represents a single bond, divalent ortrivalent chain hydrocarbon group, a divalent or trivalent alicyclichydrocarbon group, or a divalent or trivalent aromatic hydrocarbongroup.

The divalent or trivalent chain hydrocarbon group is preferably adivalent or trivalent chain hydrocarbon group having 1 to 30 carbonatoms.

The divalent or trivalent alicyclic hydrocarbon group is preferably adivalent or trivalent alicyclic hydrocarbon group having 3 to 30 carbonatoms.

The divalent or trivalent aromatic hydrocarbon group is preferably adivalent or trivalent aromatic hydrocarbon group having 6 to 30 carbonatoms.

In a case where A is a single bond, the oxygen atom of an (alkyl)acrylicacid (typically a (meth)acrylic acid) to which R_(A) ¹ is bonded at theα-position constituting a polymer is directly bonded to the carbon atomconstituting the cyclic carbonic ester.

The “chain hydrocarbon group” is used to mean a hydrocarbon group thatdoes not include a cyclic structure in the main chain, and includes onlya chain structure. Examples of the “divalent chain hydrocarbon grouphaving 1 to 30 carbon atoms” include linear alkylene groups such as amethylene group, an ethylene group, a 1,2-propylene group, a1,3-propylene group, a tetramethylene group, a pentamethylene group, ahexamethylene group, a heptamethylene group, an octamethylene group, anonamethylene group, a decamethylene group, an undecamethylene group, adodecamethylene group, a tridecamethylene group, a tetradecamethylenegroup, a pentadecamethylene group, a hexadecamethylene group, aheptadecamethylene group, an octadecamethylene group, anonadecamethylene group, and an eicosylene group; and branched alkylenegroups such as a 1-methyl-1,3-propylene group, a 2-methyl-1,3-propylenegroup, a 2-methyl-1,2-propylene group, a 1-methyl-1,4-butylene group, a2-methyl-1,4-butylene group, a methylidene group, an ethylidene group, apropylidene group, and a 2-propylidene group. Examples of the “trivalentchain hydrocarbon group having 1 to 30 carbon atoms” include a groupproduced by elimination of one hydrogen atom from the functional group.

Examples of the structure in a case where A is the chain hydrocarbongroup include a structure in which the oxygen atom of an (alkyl)acrylicacid (typically a (meth)acrylic acid) to which R_(A) ¹ is bonded at theα-position constituting a polymer is bonded to the carbon atomconstituting the cyclic carbonic ester through a linear alkylene grouphaving 1 to 5 carbon atoms (the repeating units (A-1a) to (A-1f) whichwill be described later). In this structure, a cyclic structure may beincluded as a substituent of A (the repeating unit (A-1p) which will bedescribed later).

A carbon atom included in A and a carbon atom constituting the cycliccarbonic ester may be bonded to each other to form a ring structure.That is, the cyclic carbonic ester may form a part of a fused ring or aspiro ring. A fused ring is formed in a case where two carbon atoms ofthe cyclic carbonic ester are included in the ring structure, and aspiro ring is formed in a case where only one carbon atom of the cycliccarbonic ester is included. The repeating units (A-1g), (A-1q), (A-1t),(A-1u), (A-1i), (A-1r), (A-1s), (A-1v), and (A-1w) which will bedescribed later are examples in which a fused ring including a carbonatom included in A and two carbon atoms constituting the cyclic carbonicester is formed. On the other hand, the repeating unit (A-1j) which willbe described later is an example in which a spiro ring is formed by acarbon atom included in A and one carbon atom constituting the cycliccarbonic ester. In addition, the ring structure may be a hetero ring(the repeating units (A-1q to A-1v) which will be described later).

The “alicyclic hydrocarbon group” means a hydrocarbon group thatincludes only an alicyclic hydrocarbon structure and does not include anaromatic ring structure, as a ring structure. Here, the alicyclichydrocarbon group does not necessarily need to be formed only of analicyclic hydrocarbon structure, but may partly include a chainstructure.

Examples of the “divalent alicyclic hydrocarbon group” includemonocyclic cycloalkylene groups having 3 to 10 carbon atoms, such as a1,3-cyclobutylene group, a 1,3-cyclopentylene group, a 1,4-cyclohexylenegroup, and a 1,5-cyclooctylene group; and polycyclic cycloalkylenegroups such as a 1,4-norbornylene group, a 2,5-norbornylene group, a1,5-adamantylene group, and a 2,6-adamantylene group. Examples of the“trivalent alicyclic hydrocarbon group” include a group produced byelimination of one hydrogen atom from the functional groups, and thelike.

Examples of the structure in a case where A is the alicyclic hydrocarbongroup include a structure in which the oxygen atom of an (alkyl)acrylicacid (typically a (meth)acrylic acid) to which R_(A) ¹ is bonded at theα-position constituting a polymer is bonded to the carbon atomconstituting the cyclic carbonic ester through a cyclopentylene group(the repeating units (A-1g) and (A-1h) which will be described later),through a norbornylene group (the repeating units (A-1j), (A-1k), and(A-1l) which will be described later), or through a substitutedtetradecahydrophenanthryl group (the repeating unit (A-1n) which will bedescribed later).

Moreover, the repeating units (A-1k) and (A-1l) which will be describedlater are examples in which a fused ring which includes a carbon atomincluded in A and two carbon atoms constituting the cyclic carbonicester is formed. On the other hand, the repeating units (A-1j) and(A-1n) which will be described later are examples in which a spiro ringis formed by a carbon atom included in A and one carbon atomconstituting the cyclic carbonic ester.

The “aromatic hydrocarbon group” means a hydrocarbon group that includesan aromatic ring structure as a ring structure. Here, the aromatichydrocarbon group does not necessarily need to be formed only of anaromatic ring structure, but may include a chain structure or analicyclic hydrocarbon structure in a part thereof.

Examples of the “divalent aromatic hydrocarbon group” include arylenegroups such as a phenylene group, a tolylene group, a naphthylene group,a phenanthrylene group, and an anthrylene group. Examples of the“trivalent aromatic hydrocarbon group” include a group produced byelimination of one hydrogen atom from the functional groups.

Examples of the structure in which A is the aromatic hydrocarbon groupinclude a structure in which the oxygen atom of an (alkyl)acrylic acid(typically a (meth)acrylic acid) to which R_(A) ¹ is bonded at theα-position constituting a polymer is bonded to the carbon atomconstituting the cyclic carbonic ester through a benzylene group (therepeating unit (A-1o) which will be described later). The repeating unit(A-1o) is an example in which a fused ring including a carbon atomincluded in A and two carbon atoms constituting the cyclic carbonicester is formed.

A preferably represents a divalent or trivalent chain hydrocarbon group,or a divalent or trivalent alicyclic hydrocarbon group, more preferablyrepresents a divalent or trivalent chain hydrocarbon group, and stillmore preferably represents a linear alkylene group having 1 to 5 carbonatoms.

The monomer can be synthesized by the method known in the related art,for example, described in Tetrahedron Letters, Vol. 27, No. 32 p. 3741(1986), and Organic Letters, Vol. 4, No. 15 p. 2561 (2002).

Specific examples of the repeating unit represented by General Formula(A-1) (repeating units (A-1a) to (A-1w)) are shown below, but thepresent invention is not limited thereto.

Furthermore, R_(A) ¹ in the following specific examples has the samedefinition as R_(A) ¹ in General Formula (A-1).

The resin (P) may include only one kind or two or more kinds of therepeating unit represented by General Formula (A-1).

In the resin (P), the content of the repeating units having a carbonatestructure (cyclic carbonic ester structure) (preferably a repeating unitrepresented by General Formula (A-1)) is preferably 3% to 80% by mole,more preferably 3% to 60% by mole, particularly preferably 3% to 30% bymole, and most preferably 10% to 15% by mole, with respect to all therepeating units constituting the resin (P).

Suitable examples of the repeating unit (b1) and the repeating unit (b2)include the repeating unit having a lactone structure or a sultonestructure, and the repeating unit having a carbonate structure, asdescribed above.

Among these, as the repeating unit (b1), a repeating unit having amonocyclic lactone structure is preferable, in view of providingsuitable solubility in an organic solvent.

In addition, as the repeating unit (b2), a repeating unit represented bythe following General Formula (2) is preferable from the viewpoint ofproviding etching resistance.

Here, in General Formula (2), R₃ represents a hydrogen atom or anorganic group, R₄ represents a hydrogen atom, an alkyl group, acycloalkyl group, or a cyano group, and * represents a binding position.

Examples of the organic group represented by R₃ in General Formula (2)include an alkyl group which may have a substituent such as a fluorineatom and a hydroxyl group, and as R₃, a hydrogen atom, a methyl group, atrifluoromethyl group, or a hydroxymethyl group is preferable.

Examples of the alkyl group represented by R₄ in General Formula (2)include an alkyl group having 1 to 4 carbon atoms, and the alkyl groupis preferably a methyl group, an ethyl group, or a propyl group, andmore preferably a methyl group.

Examples of the cycloalkyl group represented by R₄ in General Formula(2) include a cyclopropyl group, a cyclobutyl group, a cyclopentylgroup, and a cyclohexyl group.

In addition, in the alkyl group and the cycloalkyl group, represented byR₄ in General Formula (2), one or more methylene groups constituting thegroups may also be substituted with a heteroatom such as an oxygen atom,or a group having a heteroatom, such as a carbonyl group.

[1-3] Other Repeating Units

The resin (P) may include other repeating units.

For example, the resin (P) may include a repeating unit having ahydroxyl group or a cyano group, other than those of General Formulae(AI) and (III). Examples of such a repeating unit include the repeatingunits described in paragraphs [0081] to [0084] of JP2014-098921A.

Furthermore, the resin (P) may have a repeating unit having analkali-soluble group. Examples of the alkali-soluble group include acarboxyl group, a sulfonamido group, a sulfonylimido group, abisulfonylimido group, and an aliphatic alcohol group with theα-position being substituted with an electron-withdrawing group (forexample, a hexafluoroisopropanol group). Examples of the repeating unithaving an alkali-soluble group include the repeating units described inparagraphs [0085] and [0086] of JP2014-098921A.

Moreover, the resin (P) can have a repeating unit which has an alicyclichydrocarbon structure not having a polar group (for example, analkali-soluble group, a hydroxyl group, and a cyano group), and does notexhibit acid decomposability. Examples of such a repeating unit includethe repeating units described in paragraphs [0114] to [0123] ofJP2014-106299A.

Furthermore, the resin (P) may include the repeating units described in,for example, paragraphs [0045] to [0065] of JP2009-258586A.

In addition to the repeating structural units, the resin (P) used in thecomposition of the present invention can have a variety of repeatingstructural units for the purpose of adjusting dry etching resistance,suitability for a standard developer, adhesiveness to a substrate, and aresist profile, and in addition, resolving power, heat resistance,sensitivity, and the like, which are characteristics generally requiredfor the resist. Examples of such repeating structural units include, butare not limited to, repeating structural units corresponding to thefollowing monomers.

Thus, it becomes possible to perform fine adjustments to performancerequired for the resin used in the composition of the present invention,in particular, (1) solubility with respect to a coating solvent, (2)film-forming properties (glass transition point), (3) alkalidevelopability, (4) film reduction (selection of hydrophilic,hydrophobic, or alkali-soluble groups), (5) adhesiveness of an unexposedarea to a substrate, (6) dry etching resistance, and the like.

Examples of such a monomer include a compound having oneaddition-polymerizable unsaturated bond selected from acrylic esters,methacrylic esters, acrylamides, methacrylamides, allyl compounds, vinylethers, vinyl esters, and the like.

In addition to these, an addition-polymerizable unsaturated compoundthat is copolymerizable with the monomers corresponding to variousrepeating structural units as described above may be copolymerized.

In the resin (P) used in the composition of the present invention, themolar ratio of each repeating structural unit content is appropriatelyset in order to adjust dry etching resistance, suitability for astandard developer, adhesiveness to a substrate, and a resist profile ofthe resist, and in addition, resolving power, heat resistance,sensitivity, and the like, each of which is performance generallyrequired for the resist.

When the composition of the present invention is for ArF exposure, it ispreferable that the resin (P) used in the composition of the presentinvention does not substantially have an aromatic group in terms oftransparency to ArF light. More specifically, the proportion ofrepeating units having an aromatic group in all the repeating units ofthe resin (P) is preferably 5% by mole or less, and more preferably 3%by mole or less, and ideally 0% by mole of all the repeating units, thatis, it is even more preferable that the resin (P) does not have arepeating unit having an aromatic group. Further, it is preferable thatthe resin (P) has a monocyclic or polycyclic alicyclic hydrocarbonstructure.

Furthermore, it is preferable that the resin (P) contains neither afluorine atom nor a silicon atom from the viewpoint of compatibilitywith a hydrophobic resin (D) which will be described later.

The resin (P) used in the composition of the present invention ispreferably a resin in which all the repeating units are composed of(meth)acrylate-based repeating units. In this case, all the repeatingunits may be methacrylate-based repeating units, all the repeating unitsmay be acrylate-based repeating units, or all the repeating units may becomposed of methacrylate-based repeating units and acrylate-basedrepeating units, but the acrylate-based repeating units preferablyaccounts for 50% by mole or less with respect to all the repeatingunits.

The resin (P) in the present invention can be synthesized in accordancewith an ordinary method (for example, radical polymerization). Examplesof the general synthesis method include a bulk polymerization method inwhich polymerization is carried out by dissolving monomer species and aninitiator in a solvent and heating the solution, a dropwise additionpolymerization method in which a solution of monomer species and aninitiator is added dropwise to a heating solvent for 1 to 10 hours, withthe dropwise addition polymerization method being preferable. Examplesof the reaction solvent include ethers such as tetrahydrofuran,1,4-dioxane, and diisopropyl ether, ketones such as methyl ethyl ketoneand methyl isobutyl ketone, ester solvents such as ethyl acetate, amidesolvents such as dimethyl formamide and dimethyl acetamide, and asolvent which dissolves the composition of the present invention, suchas propylene glycol monomethyl ether acetate, propylene glycolmonomethyl ether, and cyclohexanone, which will be described later. Itis more preferable to perform polymerization using the same solvent asthe solvent used in the composition of the present invention. Thus,generation of the particles during storage can be inhibited.

It is preferable that the polymerization reaction is carried out in aninert gas atmosphere such as nitrogen and argon. As the polymerizationinitiator, commercially available radical initiators (an azo-basedinitiator, peroxide, or the like) are used to initiate thepolymerization. As the radical initiator, an azo-based initiator ispreferable, and the azo-based initiator having an ester group, a cyanogroup, or a carboxyl group is preferable. Preferable initiators includeazobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl2,2′-azobis(2-methyl propionate), or the like. The initiator is added oradded in portionwise, as desired, a desired polymer is recovered afterthe reaction is completed, the reaction mixture is poured into asolvent, and then a method such as powder or solid recovery is used. Theconcentration of the reactant is 5% to 50% by mass and preferably 10% to30% by mass. The reaction temperature is normally 10° C. to 150° C.,preferably 30° C. to 120° C., and more preferably 60° C. to 100° C.

The weight-average molecular weight (Mw) of the resin (P) in the presentinvention is preferably 1,000 to 200,000, more preferably 2,000 to20,000, still more preferably 3,000 to 15,000, and particularlypreferably 3,000 to 11,000. By setting the weight-average molecularweight to 1,000 to 200,000, it is possible to prevent the deteriorationof heat resistance or dry-etching resistance, and also prevent thedeterioration of film forming properties due to deteriorateddevelopability or increased viscosity.

The dispersity (molecular weight distribution) which is a ratio (Mw/Mn)of the weight-average molecular weight (Mw) to the number-averagemolecular weight (Mn) is usually 1.0 to 3.0, and the dispersity in therange of preferably 1.0 to 2.6, more preferably 1.0 to 2.0, andparticularly preferably 1.1 to 2.0 is used. As the molecular weightdistribution is smaller, the resolution and the resist shape are better,the side wall of the resist pattern is smoother, and the roughness isbetter.

Moreover, in the present invention, the weight-average molecular weight(Mw) and the number-average molecular weight (Mn) are values in terms ofpolystyrene, determined by a gel permeation chromatography (GPC) method,using tetrahydrofuran (THF) as a developing solvent.

The content of the resin (P) in the entire composition is preferably 30%to 99% by mass, and more preferably 50% to 95% by mass, with respect tothe total solid contents.

Furthermore, the resin (P) may be used singly or in combination of twoor more kinds thereof.

[2] Compound that Generates Acid Upon Irradiation with Active Light orRadiation

The composition of the present invention contains a compound thatgenerates an acid upon irradiation with active light or radiation(hereinafter also referred to as an “acid generator”). The acidgenerator is not particularly limited, but is preferably a compound thatgenerates an organic acid upon irradiation with active light orradiation.

The acid generator may be appropriately selected from known compoundsthat generate an acid upon irradiation with active light or radiationwhich are used for a photo-initiator for cationic photopolymerization, aphoto-initiator for radical photopolymerization, a photo-decoloringagent for dyes, a photo-discoloring agent, a microresist or the like,and a mixture thereof, and used. Examples thereof include the compoundsdescribed in paragraphs [0039] to [0103] of JP2010-61043A, the compoundsdescribed in paragraphs [0284] to [0389] of JP2013-4820A, and the like,but the present invention is not limited thereto.

Examples of such an acid generator include a diazonium salt, aphosphonium salt, a sulfonium salt, an iodonium salt, imide sulfonate,oxime sulfonate, diazodisulfone, disulfone, and o-nitrobenzyl sulfonate.

Suitable examples of the acid generator contained in the composition ofthe present invention include a compound (a specific acid generator)that generates an acid upon irradiation with active light or radiationrepresented by the following General Formula (2).

(Anion)

In General Formula (2),

Xf's each independently represent a fluorine atom or an alkyl groupsubstituted with at least one fluorine atom.

R₄ and R₅ each independently represent a hydrogen atom, a fluorine atom,an alkyl group, or an alkyl group substituted with at least one fluorineatom, and in a case where R₄ and R₅ are present in plural numbers, theymay be the same as or different from each other.

L represents a divalent linking group, and in a case where L's arepresent in plural numbers, they may be the same as or different fromeach other.

W represents an organic group including a cyclic structure.

o represents an integer of 1 to 3. p represents an integer of 0 to 10. qrepresents an integer of 0 to 10.

Xf represents a fluorine atom or an alkyl group substituted with atleast one fluorine atom. The number of carbon atoms of the alkyl groupis preferably 1 to 10, and more preferably 1 to 4. Further, the alkylgroup substituted with at least one fluorine atom is preferably aperfluoroalkyl group.

Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4carbon atoms. Xf is more preferably a fluorine atom or CF₃. It isparticularly preferable that both Xf's are fluorine atoms.

R₄ and R₅ each represent a hydrogen atom, a fluorine atom, an alkylgroup, or an alkyl group substituted with at least one fluorine atom,and in a case where R₄ and R₅ are present in plural numbers, they may bethe same as or different from each other.

The alkyl group as R₄ and R₅ may have a substituent, and preferably has1 to 4 carbon atoms. R₄ and R₅ are each preferably a hydrogen atom.

Specific examples and suitable aspects of the alkyl group substitutedwith at least one fluorine atom are the same as the specific examplesand suitable aspects of Xf in General Formula (2).

L represents a divalent linking group, and in a case where L's arepresent in plural numbers, they may be the same as or different fromeach other.

Examples of the divalent linking group include —COO—, —OCO—, —CONH—,—NHCO—, —CO—, —O—, —S—, —SO—, —SO₂—, an alkylene group (preferablyhaving 1 to 6 carbon atoms), a cycloalkylene group (preferably having 3to 10 carbon atoms), an alkenylene group (preferably having 2 to 6carbon atoms), or a divalent linking group formed by combination ofthese plurality of groups. Among these, —COO—, —OCO—, —CONH—, —NHCO—,—CO—, —O—, —SO₂—, —COO-alkylene group-, —OCO-alkylene group-,—CONH-alkylene group-, or —NHCO-alkylene group- is preferable, and—COO—, —OCO—, —CONH—, —SO₂—, —COO-alkylene group-, or —OCO-alkylenegroup- is more preferable.

W represents an organic group including a cyclic structure. Above all,it is preferably a cyclic organic group.

Examples of the cyclic organic group include an alicyclic group, an arylgroup, and a heterocyclic group.

The alicyclic group may be monocyclic or polycyclic, and examples of themonocyclic alicyclic group include monocyclic cycloalkyl groups such asa cyclopentyl group, a cyclohexyl group, and a cyclooctyl group.Examples of the polycyclic alicyclic group include polycyclic cycloalkylgroups such as a norbornyl group, a tricyclodecanyl group, atetracyclodecanyl group, a tetracyclododecanyl group, and an adamantylgroup. Among these, an alicyclic group having a bulky structure having 7or more carbon atoms, such as a norbornyl group, a tricyclodecanylgroup, a tetracyclodecanyl group, a tetracyclododecanyl group, and anadamantyl group is preferable from the viewpoints of inhibitingdiffusivity into the film during post exposure baking (PEB) process andimproving Mask Error Enhancement Factor (MEEF).

The aryl group may be monocyclic or polycyclic. Examples of the arylgroup include a phenyl group, a naphthyl group, a phenanthryl group, andan anthryl group. Among these, a naphthyl group showing a relatively lowlight absorbance at 193 nm is preferable.

The heterocyclic group may be monocyclic or polycyclic, but ispreferably polycyclic so as to suppress acid diffusion. Further, theheterocyclic group may have aromaticity or may not have aromaticity.Examples of the heterocycle having aromaticity include a furan ring, athiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuranring, a dibenzothiophene ring, and a pyridine ring. Examples of theheterocycle having no aromaticity include a tetrahydropyran ring, alactone ring, a sultone ring, and a decahydroisoquinoline ring. As aheterocycle in the heterocyclic group, a furan ring, a thiophene ring, apyridine ring, or a decahydroisoquinoline ring is particularlypreferable. Further, examples of the lactone ring and the sultone ringinclude the lactone structures and sultone structures exemplified in theabove-mentioned resin (P).

The cyclic organic group may have a substituent. Examples of thesubstituent include, an alkyl group (which may be linear or branched,and preferably has 1 to 12 carbon atoms), a cycloalkyl group (which maybe monocyclic, polycyclic, or spiro ring, and preferably has 3 to 20carbon atoms), an aryl group (preferably having 6 to 14 carbon atoms), ahydroxyl group, an alkoxy group, an ester group, an amido group, aurethane group, a ureido group, a thioether group, a sulfonamido group,and a sulfonic ester group. Incidentally, the carbon constituting thecyclic organic group (the carbon contributing to ring formation) may becarbonyl carbon.

o represents an integer of 1 to 3. p represents an integer of 0 to 10. qrepresents an integer of 0 to 10.

In one aspect, it is preferable that in General Formula (2), o is aninteger of 1 to 3, p is an integer of 1 to 10, and q is 0. Xf ispreferably a fluorine atom, R₄ and R₅ are preferably both hydrogenatoms, and W is preferably a polycyclic hydrocarbon group. o is morepreferably 1 or 2, and still more preferably 1. p is more preferably aninteger of 1 to 3, still more preferably 1 or 2, and particularlypreferably 1. W is more preferably a polycyclic cycloalkyl group, andstill more preferably an adamantyl group or a diamantyl group.

(Cation)

In General Formula (2), X⁺ represents a non-nucleophilic anion.

X⁺ is not particularly limited as long as it is a non-nucleophilicanion, but suitable aspects thereof include cations (parts other thanZ⁻) in General Formula (ZI), (ZII), or (ZIII) which will be describedlater.

(Suitable Aspects)

Suitable aspects of the specific acid generator include a compoundrepresented by the following General Formula (ZI), (ZII), or (ZIII).

In General Formula (ZI),

R₂₀₁, R₂₀₂, and R₂₀₃ each independently represent an organic group.

The number of carbon atoms of the organic group as R₂₀₁, R₂₀₂, and R₂₀₃is generally 1 to 30, and preferably 1 to 20.

Furthermore, two members out of R₂₀₁ to R₂₀₃ may be bonded to each otherto form a ring structure, and the ring may include an oxygen atom, asulfur atom, an ester bond, an amide bond, or a carbonyl group, andexamples of the group formed by the bonding of two members out of R₂₀₁to R₂₀₃ include an alkylene group (for example, a butylene group and apentylene group).

Z⁻ represents an anion in General Formula (2), and specificallyrepresents the following anion.

Examples of the organic group represented by R₂₀₁, R₂₀₂, and R₂₀₃include groups corresponding to the compounds (ZI-1), (ZI-2), (ZI-3),and (ZI-4), which will be described later.

Incidentally, it may be a compound having a plurality of structuresrepresented by General Formula (ZI). For example, it may be a compoundhaving a structure in which at least one of R₂₀₁, . . . , or R₂₀₃ in thecompound represented by General Formula (ZI) is bonded to at least oneof R₂₀₁, . . . , or R₂₀₃ of another compound represented by GeneralFormula (ZI) through a single bond or a linking group.

More preferred examples of the component (ZI) include the compounds(ZI-1), (ZI-2), (ZI-3), and (ZI-4) described below.

First, the compound (ZI-1) will be described.

The compound (ZI-1) is an arylsulfonium compound, that is, a compoundhaving arylsulfonium as a cation, in which at least one of R₂₀₁, . . . ,or R₂₀₃ in General Formula (ZI) is an aryl group.

In the arylsulfonium compound, all of R₂₀₁ to R₂₀₃ may be an aryl group,or a part of R₂₀₁ to R₂₀₃ may be an aryl group, with the remainder beingan alkyl group or a cycloalkyl group.

Examples of the arylsulfonium compound include a triarylsulfoniumcompound, a diarylalkylsulfonium compound, an aryldialkylsulfoniumcompound, a diarylcycloalkylsulfonium compound, and anaryldicycloalkylsulfonium compound.

The aryl group in the arylsulfonium compound is preferably a phenylgroup or a naphthyl group, and more preferably a phenyl group. The arylgroup may be an aryl group having a heterocyclic structure containing anoxygen atom, a nitrogen atom, a sulfur atom, or the like. Examples ofthe heterocyclic structure include a pyrrole residue, a furan residue, athiophene residue, an indole residue, a benzofuran residue, and abenzothiophene residue. In a case where the arylsulfonium compound hastwo or more aryl groups, these two or more aryl groups may be the sameas or different from each other.

The alkyl group or the cycloalkyl group which may be contained, ifdesired, in the arylsulfonium compound, is preferably a linear orbranched alkyl group having 1 to 15 carbon atoms or a cycloalkyl grouphaving 3 to 15 carbon atoms, for example, a methyl group, an ethylgroup, a propyl group, an n-butyl group, a sec-butyl group, a t-butylgroup, a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.

The aryl group, the alkyl group, and the cycloalkyl group of R₂₀₁ toR₂₀₃ may have, an alkyl group (for example, having 1 to 15 carbonatoms), a cycloalkyl group (for example, having 3 to 15 carbon atoms),an aryl group (for example, having 6 to 14 carbon atoms), an alkoxygroup (for example, having 1 to 15 carbon atoms), a halogen atom, ahydroxyl group, or a phenylthio group as the substituent.

Next, the compound (ZI-2) will be described.

The compound (ZI-2) is a compound in which R₂₀₁ to R₂₀₃ in Formula (ZI)each independently represent an organic group not having an aromaticring. Here, the aromatic ring also encompasses an aromatic ringcontaining a hetero atom.

The organic group not containing an aromatic ring as R₂₀₁ to R₂₀₃ hasgenerally 1 to 30 carbon atoms, and preferably 1 to 20 carbon atoms.

R₂₀₁ to R₂₀₃ are each independently preferably an alkyl group, acycloalkyl group, an allyl group, or a vinyl group, more preferably alinear or branched 2-oxoalkyl group, a 2-oxocycloalkyl group, or analkoxycarbonylmethyl group, and particularly preferably a linear orbranched 2-oxoalkyl group.

Preferred examples of the alkyl group and the cycloalkyl group of R₂₀₁to R₂₀₃ include linear or branched alkyl groups having 1 to 10 carbonatoms (for example, a methyl group, an ethyl group, a propyl group, abutyl group, and a pentyl group), and cycloalkyl groups having 3 to 10carbon atoms (a cyclopentyl group, a cyclohexyl group, and a norbornylgroup).

R₂₀₁ to R₂₀₃ may further be substituted with a halogen atom, an alkoxygroup (for example, an alkoxy group having 1 to 5 carbon atoms), ahydroxyl group, a cyano group, or a nitro group.

Next, the compound (ZI-3) will be described.

The compound (ZI-3) is a compound represented by the following GeneralFormula (ZI-3), which is a compound having a phenacylsulfonium saltstructure.

In General Formula (ZI-3),

R_(1c) to R_(5c) each independently represent a hydrogen atom, an alkylgroup, a cycloalkyl group, an aryl group, an alkoxy group, an aryloxygroup, an alkoxycarbonyl group, an alkylcarbonyloxy group, acycloalkylcarbonyloxy group, a halogen atom, a hydroxyl group, a nitrogroup, an alkylthio group, or an arylthio group.

R_(6c) and R_(7c) each independently represent a hydrogen atom, an alkylgroup, a cycloalkyl group, a halogen atom, a cyano group, or an arylgroup.

R_(x) and R_(y) each independently represent an alkyl group, acycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, analkoxycarbonylalkyl group, an allyl group, or a vinyl group.

Among any two or more members out of R_(1c) to R_(5c), R_(5c) andR_(6c), R_(6c) and R_(7c), R_(5c) and R_(x), and R_(x) and R_(y) eachmay be bonded to each other to form a ring structure, and the ringstructure may contain an oxygen atom, a sulfur atom, a ketone group, anester bond, or an amide bond.

Examples of the ring structure include an aromatic or non-aromatichydrocarbon ring, an aromatic or non-aromatic heterocycle, or apolycyclic fused ring composed of two or more of these rings. Examplesof the ring structure include 3- to 10-membered rings, and the ringstructures are preferably 4- to 8-membered ring, and more preferably 5-or 6-membered rings.

Examples of groups formed by the bonding of any two or more of R_(1c) toR_(5c), R_(6c) and R_(7c), and R_(x) and R_(y) include a butylene groupand a pentylene group.

As groups formed by the bonding of R_(5c) and R_(6c), and R_(5c) andR_(x), a single bond or alkylene group is preferable, and examplesthereof include a methylene group and an ethylene group.

Zc⁻ represents an anion in General Formula (2), and specifically, is thesame as described above.

Specific examples of the alkoxy group in the alkoxycarbonyl group asR_(1c) to R_(5c) are the same as the specific examples of the alkoxygroup as R_(1c) to R_(5c).

Specific examples of the alkyl group in the alkylcarbonyloxy group andthe alkylthio group as R_(1c) to R_(5c) are the same as the specificexamples of the alkyl group as R_(1c) to R_(5c).

Specific examples of the cycloalkyl group in the cycloalkylcarbonyloxygroup as R_(1c) to R_(5c) are the same as the specific examples of thecycloalkyl group as R_(1c) to R_(5c).

Specific examples of the aryl group in the aryloxy group and thearylthio group as R_(1c) to R_(5c) are the same as the specific examplesof the aryl group as R_(1c) to R_(5c).

Examples of the cation in the compound (ZI-2) or (ZI-3) in the presentinvention include the cations described under paragraph [0036] of thespecification of US2012/0076996A.

Next, the compound (ZI-4) will be described.

The compound (ZI-4) is represented by the following General Formula(ZI-4).

In General Formula (ZI-4),

R₁₃ represents a hydrogen atom, a fluorine atom, a hydroxyl group, analkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonylgroup, or a group having a cycloalkyl group. These groups may have asubstituent.

In a case where R₁₄'s are present in plural numbers, they eachindependently represent a hydroxyl group, an alkyl group, a cycloalkylgroup, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group,an alkylsulfonyl group, a cycloalkylsulfonyl group, or a group having acycloalkyl group. These groups may have a substituent.

R₁₅'s each independently represent an alkyl group, a cycloalkyl group,or a naphthyl group. These groups may have a substituent. Two R₁₅'s maybe bonded to each other to form a ring. When two R₁₅'s are bonded toform a ring, the ring skeleton may include a hetero atom such as anoxygen atom and a nitrogen atom. In one aspect, it is preferable thattwo R₁₅'s are alkylene groups, and are bonded to each other to form aring structure.

l represents an integer of 0 to 2.

r represents an integer of 0 to 8.

Z⁻ represents an anion in General Formula (2), and specifically, is asdescribed above.

In General Formula (ZI-4), as the alkyl group of R₁₃, R₁₄, and R₁₅, analkyl which is linear or branched and has 1 to 10 carbon atoms ispreferable, and preferred examples thereof include a methyl group, anethyl group, an n-butyl group, and a t-butyl group.

Examples of the cation of the compound represented by General Formula(ZI-4) in the present invention include the cations described inparagraphs [0121], [0123], and [0124] of JP2010-256842A, paragraphs[0127], [0129], and [0130] of JP2011-76056A, and the like.

Next, General Formulae (ZII) and (ZIII) will be described.

In General Formulae (ZII) and (ZIII), R₂₀₄ to R₂₀₇ each independentlyrepresent an aryl group, an alkyl group, or a cycloalkyl group.

The aryl group of R₂₀₄ to R₂₀₇ is preferably a phenyl group or anaphthyl group, and more preferably a phenyl group. The aryl group ofR₂₀₄ to R₂₀₇ may be an aryl group having a heterocyclic structurecontaining an oxygen atom, a nitrogen atom, a sulfur atom, or the like.Examples of the skeleton of the aryl group having a heterocyclicstructure include pyrrole, furan, thiophene, indole, benzofuran, andbenzothiophene.

Preferred examples of the alkyl group and the cycloalkyl group in R₂₀₄to R₂₀₇ include linear or branched alkyl groups having 1 to 10 carbonatoms (for example, a methyl group, an ethyl group, a propyl group, abutyl group, and a pentyl group), and cycloalkyl groups having 3 to 10carbon atoms (a cyclopentyl group, a cyclohexyl group, and a norbornylgroup).

The aryl group, the alkyl group, or the cycloalkyl group of R₂₀₄ to R₂₀₇may have a substituent. Examples of the substituent which the arylgroup, the alkyl group, or the cycloalkyl group of R₂₀₄ to R₂₀₇ may haveinclude an alkyl group (for example, having 1 to 15 carbon atoms), acycloalkyl group (for example, having 3 to 15 carbon atoms), an arylgroup (for example, having 6 to 15 carbon atoms), an alkoxy group (forexample, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group,and a phenylthio group.

Z⁻ represents an anion in General Formula (2), and specifically, is asdescribed above.

The acid generator (including a specific acid generator, which applieshereinafter) may be in a form of a low molecular compound or in a formintroduced into a part of a polymer. Further, a combination of the formof a low molecular compound and the form introduced into a part of apolymer may also be used.

In a case where the acid generator is in the form of a low molecularcompound, the molecular weight is preferably 3,000 or less, morepreferably 2,000 or less, and still more preferably 1,000 or less.

In a case where the acid generator is in the form introduced into a partof a polymer, it may be introduced into a part of the resin (P)described above or into a resin other than the resin (P).

The acid generator can be synthesized by a known method, and can besynthesized by, for example, the method described in JP2007-161707A.

The acid generators may be used singly or in combination of two or morekinds thereof.

The content of the acid generator (a total sum of contents in a casewhere the acid generators are present in plural kinds) in thecomposition is preferably 0.1% to 30% by mass, more preferably 0.5% to25% by mass, still more preferably 3% to 20% by mass, and particularlypreferably 3% to 15% by mass, with respect to the total solid content ofthe composition.

Furthermore, the content of the acid generator (a total sum of contentsin a case where the acid generators are present in plural kinds) in acase where the acid generator is a specific acid generator representedby General Formula (ZI-3) or (ZI-4) is preferably 5% to 35% by mass,more preferably 8% to 30% by mass, still more preferably 9% to 30% bymass, and particularly preferably 9% to 25% by mass, with respect to thetotal solid content of the composition.

[3] Hydrophobic Resin

The composition of the present invention may contain a hydrophobic resin(hereinafter also referred to as a “hydrophobic resin (D)” or simply a“resin (D)”). Further, the hydrophobic resin (D) is preferably differentfrom the resin (P).

Although the hydrophobic resin (D) is preferably designed to be unevenlylocalized on an interface as described above, it does not necessarilyhave to have a hydrophilic group in its molecule as different from thesurfactant, and does not need to contribute to uniform mixing ofpolar/nonpolar materials.

Examples of the effect of addition of the hydrophobic resin includecontrol of the static/dynamic contact angle of the resist film surfacewith respect to water, improvement of the immersion liquid trackingproperties, and suppression of out gas.

The hydrophobic resin (D) preferably has at least one of a “fluorineatom”, a “silicon atom”, or a “CH₃ partial structure which is containedin a side chain portion of a resin” from the point of view of unevendistribution on the film surface layer, and more preferably has two ormore kinds.

In a case where hydrophobic resin (D) includes a fluorine atom and/or asilicon atom, the fluorine atom and/or the silicon atom in thehydrophobic resin (D) may be contained in the main chain or the sidechain of the resin.

In a case where the hydrophobic resin (D) contains a fluorine atom, theresin is preferably a resin which contains an alkyl group having afluorine atom, a cycloalkyl group having a fluorine atom, or an arylgroup having a fluorine atom, as a partial structure having a fluorineatom.

The alkyl group having a fluorine atom (preferably having 1 to 10 carbonatoms, and more preferably having 1 to 4 carbon atoms) is a linear orbranched alkyl group in which at least one hydrogen atom is substitutedwith a fluorine atom, and may further have a substituent other than afluorine atom.

The cycloalkyl group having a fluorine atom and the aryl group having afluorine atom are a cycloalkyl group in which one hydrogen atom issubstituted with a fluorine atom, and an aryl group having a fluorineatom, respectively, and may further have a substituent other than afluorine atom.

Preferred examples of the alkyl group having a fluorine atom, thecycloalkyl group having a fluorine atom, and the aryl group having afluorine atom include groups represented by the following GeneralFormulae (F2) to (F4), but the present invention is not limited thereto.

In General Formulae (F2) to (F4),

R₅₇ to R₆₈ each independently represent a hydrogen atom, a fluorineatom, or an (linear or branched) alkyl group, provided that at least oneof R₅₇, . . . , or R₆₁, at least one of R₆₂, . . . , or R₆₄, and atleast one of R₆₅, . . . , or R₆₈ each independently represent a fluorineatom or an alkyl group (preferably having 1 to 4 carbon atoms) in whichat least one hydrogen atom is substituted with a fluorine atom.

It is preferable that all of R₅₇ to R₆₁, and R₆₅ to R₆₇ are fluorineatoms. R₆₂, R₆₃, and R₆₈ are each preferably an alkyl group (preferablyhaving 1 to 4 carbon atoms) in which at least one hydrogen atom issubstituted with a fluorine atom, and more preferably a perfluoroalkylgroup having 1 to 4 carbon atoms. R₆₂ and R₆₃ may be linked to eachother to form a ring.

The hydrophobic resin (D) may contain a silicon atom. It is preferably aresin having, as the partial structure having a silicon atom, analkylsilyl structure (preferably a trialkylsilyl group) or a cyclicsiloxane structure.

Examples of the repeating unit having a fluorine atom or a silicon atominclude those exemplified in [0519] of US2012/0251948A1.

Moreover, it is also preferable that the hydrophobic resin (D) containsa CH₃ partial structure in the side chain portion as described above.

Here, the CH₃ partial structure (hereinafter also simply referred to asa “side chain CH₃ partial structure”) contained in the side chainportion in the hydrophobic resin (D) includes a CH₃ partial structurecontained in an ethyl group, a propyl group, and the like.

On the other hand, a methyl group bonded directly to the main chain ofthe hydrophobic resin (D) (for example, an α-methyl group in therepeating unit having a methacrylic acid structure) makes only a smallcontribution of uneven distribution to the surface of the hydrophobicresin (D) due to the effect of the main chain, and it is therefore notincluded in the CH₃ partial structure in the present invention.

More specifically, in a case where the hydrophobic resin (D) contains arepeating unit derived from a monomer having a polymerizable moiety witha carbon-carbon double bond, such as a repeating unit represented by thefollowing General Formula (M), and in addition, R₁₁ to R₁₄ are CH₃“themselves”, such CH₃ is not included in the CH₃ partial structurecontained in the side chain portion in the present invention.

On the other hand, a CH₃ partial structure which is present via acertain atom from a C—C main chain corresponds to the CH₃ partialstructure in the present invention. For example, in a case where R₁₁ isan ethyl group (CH₂CH₃), the hydrophobic resin has “one” CH₃ partialstructure in the present invention.

In General Formula (M),

R₁₁ to R₁₄ each independently represent a side chain portion.

Examples of R₁₁ to R₁₄ at the side chain portion include a hydrogen atomand a monovalent organic group.

Examples of the monovalent organic group for R₁₁ to R₁₄ include an alkylgroup, a cycloalkyl group, an aryl group, an alkyloxycarbonyl group, acycloalkyloxycarbonyl group, an aryloxycarbonyl group, analkylaminocarbonyl group, a cycloalkylaminocarbonyl group, and anarylaminocarbonyl group, each of which may further have a substituent.

The hydrophobic resin (D) is preferably a resin including a repeatingunit having the CH₃ partial structure in the side chain portion thereof.Further, the hydrophobic resin more preferably has, as such a repeatingunit, at least one repeating unit (x) selected from a repeating unitrepresented by the following General Formula (II) or a repeating unitrepresented by the following General Formula (III).

Hereinafter, the repeating unit represented by General Formula (II) willbe described in detail.

In General Formula (II), X_(b1) represents a hydrogen atom, an alkylgroup, a cyano group, or a halogen atom, and R₂ represents an organicgroup which has one or more CH₃ partial structures and is stable againstan acid. Here, more specifically, the organic group which is stableagainst an acid is preferably an organic group which does not have an“acid-decomposable group” described with respect to the resin (P).

The alkyl group of X_(b1) is preferably an alkyl group having 1 to 4carbon atoms, and examples thereof include a methyl group, an ethylgroup, a propyl group, a hydroxymethyl group, and a trifluoromethylgroup, with the methyl group being preferable.

X_(b1) is preferably a hydrogen atom or a methyl group.

Examples of R₂ include an alkyl group, a cycloalkyl group, an alkenylgroup, a cycloalkenyl group, an aryl group, and an aralkyl group, eachof which has one or more CH₃ partial structures. Each of the cycloalkylgroup, the alkenyl group, the cycloalkenyl group, the aryl group and thearalkyl group may further have an alkyl group as a substituent.

R₂ is preferably an alkyl group or an alkyl-substituted cycloalkylgroup, each of which has one or more CH₃ partial structures.

The number of the CH₃ partial structures contained in the organic groupwhich has one or more CH₃ partial structures and is stable against anacid as R₂ is preferably 2 to 10, and more preferably 2 to 8.

Specific preferred examples of the repeating unit represented by GeneralFormula (II) are shown below, but the present invention is not limitedthereto.

The repeating unit represented by General Formula (II) is preferably arepeating unit which is stable against an acid (acid-indecomposable),and specifically, it is preferably a repeating unit not having a groupthat decomposes by the action of an acid to generate a polar group.

Hereinafter, the repeating unit represented by General Formula (III)will be described in detail.

(In General Formula (III), X_(b2) represents a hydrogen atom, an alkylgroup, a cyano group, or a halogen atom, R₃ represents an organic groupwhich has one or more CH₃ partial structures and is stable against anacid, and n represents an integer of 1 to 5.

The alkyl group of X_(b2) is preferably an alkyl group having 1 to 4carbon atoms, and examples thereof include a methyl group, an ethylgroup, a propyl group, a hydroxymethyl group, and a trifluoromethylgroup, but a hydrogen atom is preferable.

X_(b2) is preferably a hydrogen atom.

Since R₃ is an organic group stable against an acid, more specifically,R₃ is preferably an organic group which does not have the“acid-decomposable group” described with respect to the resin (P).

Examples of R₃ include an alkyl group having one or more CH₃ partialstructures.

The number of the CH₃ partial structures contained in the organic groupwhich has one or more CH₃ partial structures and is stable against anacid as R₃ is preferably 1 to 10, more preferably 1 to 8, and still morepreferably 1 to 4.

n represents an integer of 1 to 5, more preferably 1 to 3, and stillmore preferably 1 or 2.

Specific preferred examples of the repeating unit represented by GeneralFormula (III) are shown below, but the present invention is not limitedthereto.

The repeating unit represented by General Formula (III) is preferably arepeating unit which is stable against an acid (acid-indecomposable),and specifically, it is preferably a repeating unit which does not havea group that decomposes by the action of an acid to generate a polargroup.

In a case where the hydrophobic resin (D) includes a CH₃ partialstructure in the side chain portion thereof, and in particular, it hasneither a fluorine atom nor a silicon atom, the content of at least onerepeating unit (x) of the repeating unit represented by General Formula(II) or the repeating unit represented by General Formula (III) ispreferably 90% by mole or more, and more preferably 95% by mole or more,with respect to all the repeating units of the hydrophobic resin (D).Further, the content is usually 100% by mole or less with respect to allthe repeating units of the hydrophobic resin (D).

By incorporating at least one repeating unit (x) of the repeating unitrepresented by General Formula (II) or the repeating unit represented byGeneral Formula (III) in a proportion of 90% by mole or more withrespect to all the repeating units of the hydrophobic resin (D) into thehydrophobic resin (D), the surface free energy of the hydrophobic resin(D) is increased. As a result, it is difficult for the hydrophobic resin(D) to be unevenly distributed on the surface of the resist film and thestatic/dynamic contact angle of the resist film with respect to watercan be securely increased, thereby enhancing the immersion liquidtracking properties.

In addition, in a case where the hydrophobic resin (D) contains (i) afluorine atom and/or a silicon atom or (ii) a CH₃ partial structure inthe side chain moiety, the hydrophobic resin may have at least one groupselected from the following groups (x) to (z):

(x) an acid group,

(y) a group having a lactone structure, an acid anhydride group, or anacid imido group, and

(z) a group that decomposes by the action of an acid.

Examples of the acid group (x) include a phenolic hydroxyl group, acarboxylic acid group, a fluorinated alcohol group, a sulfonic acidgroup, a sulfonamido group, a sulfonylimido group, an(alkylsulfonyl)(alkylcarbonyl)methylene group, an(alkylsulfonyl)(alkylcarbonyl)imido group, a bis(alkylcarbonyl)methylenegroup, a bis(alkylcarbonyl)imido group, a bis(alkylsulfonyl)methylenegroup, a bis(alkylsulfonyl)imido group, a tris(alkylcarbonyl)methylenegroup, and a tris(alkylsulfonyl)methylene group.

Preferred examples of the acid group include a fluorinated alcohol group(preferably a hexafluoroisopropanol group), a sulfonimido group, and abis(alkylcarbonyl)methylene group.

Examples of the repeating unit containing an acid group (x) include arepeating unit in which the acid group is directly bonded to the mainchain of the resin, such as a repeating unit by an acrylic acid or amethacrylic acid, and a repeating unit in which the acid group is bondedto the main chain of the resin through a linking group, and the acidgroup may also be introduced into the polymer chain terminal by using apolymerization initiator or chain transfer agent containing an acidgroup during the polymerization. All of these cases are preferable. Therepeating unit having an acid group (x) may have at least one of afluorine atom or a silicon atom.

The content of the repeating units containing an acid group (x) ispreferably 1% to 50% by mole, more preferably 3% to 35% by mole, andstill more preferably 5% to 20% by mole, with respect to all therepeating units in the hydrophobic resin (D).

Specific preferred examples of the repeating unit containing an acidgroup (x) are shown below, but the present invention is not limitedthereto. In the formulae, Rx represents a hydrogen atom, CH₃, CF₃, orCH₂OH.

As the group having a lactone structure, the acid anhydride group, orthe acid imido group (y), a group having a lactone structure isparticularly preferable.

The repeating unit including such a group is, for example, a repeatingunit in which the group is directly bonded to the main chain of theresin, such as a repeating unit by an acrylic ester or a methacrylicester. This repeating unit may be a repeating unit in which the group isbonded to the main chain of the resin through a linking group.Alternatively this repeating unit may be introduced into the terminal ofthe resin by using a polymerization initiator or chain transfer agentcontaining the group during the polymerization.

Examples of the repeating unit containing a group having a lactonestructure include the same ones as the repeating unit having a lactonestructure as described earlier in the section of the resin (P).

The content of the repeating units having a group having a lactonestructure, an acid anhydride group, or an acid imido group is preferably1% to 100% by mole, more preferably 3% to 98% by mole, and still morepreferably 5% to 95% by mole, with respect to all the repeating units inthe hydrophobic resin (D).

With respect to the hydrophobic resin (D), examples of the repeatingunit having a group (z) that decomposes by the action of an acid includethe same ones as the repeating units having an acid-decomposable group,as mentioned with respect to the resin (P). The repeating unit having agroup (z) that decomposes by the action of an acid may have at least oneof a fluorine atom or a silicon atom. With respect to the hydrophobicresin (D), the content of the repeating units having a group (z) thatdecomposes by the action of an acid is preferably 1% to 80% by mole,more preferably 10% to 80% by mole, and still more preferably 20% to 60%by mole, with respect to all the repeating units in the resin (D).

The hydrophobic resin (D) may further have repeating units differentfrom the above-mentioned repeating units.

The content of the repeating units including a fluorine atom ispreferably 10% to 100% by mole, and more preferably 30% to 100% by mole,with respect to all the repeating units included in the hydrophobicresin (D). Further, the content of the repeating units including asilicon atom is preferably 10% to 100% by mole, and more preferably 20%to 100% by mole, with respect to all the repeating units included in thehydrophobic resin (D).

On the other hand, in particular, in a case where the hydrophobic resin(D) includes a CH₃ partial structure in the side chain moiety thereof,it is also preferable that the hydrophobic resin (D) has a form nothaving substantially any one of a fluorine atom and a silicon atom.Further, it is preferable that the hydrophobic resin (D) issubstantially composed of only repeating units, which are composed ofonly atoms selected from a carbon atom, an oxygen atom, a hydrogen atom,a nitrogen atom, and a sulfur atom.

The weight-average molecular weight of the hydrophobic resin (D) interms of standard polystyrene is preferably 1,000 to 100,000, and morepreferably 1,000 to 50,000.

Furthermore, the hydrophobic resins (D) may be used singly or incombination of plural kinds thereof.

The content of the hydrophobic resin (D) in the composition ispreferably 0.01% to 10% by mass, and more preferably 0.05% to 8% bymass, with respect to the total solid content of the composition of thepresent invention.

In the hydrophobic resin (D), the content of residual monomers oroligomer components is also preferably 0.01% to 5% by mass, and morepreferably 0.01% to 3% by mass. Further, the molecular weightdistribution (Mw/Mn, also referred to as a dispersity) is preferably inthe range of 1 to 5, and more preferably in the range of 1 to 3.

As the hydrophobic resin (D), various commercial products may also beused, or the resin may be synthesized by an ordinary method (forexample, radical polymerization).

[4] Acid Diffusion Control Agent

The composition of the present invention preferably contains an aciddiffusion control agent. The acid diffusion control agent acts as aquencher that inhibits a reaction of the acid-decomposable resin in theunexposed area by excessive generated acids by trapping the acidsgenerated from an acid generator or the like upon exposure. As the aciddiffusion control agent, a basic compound, a low molecular compoundwhich has a nitrogen atom and a group that leaves by the action of anacid, a basic compound whose basicity is reduced or lost uponirradiation with active light or radiation, or an onium salt whichbecomes a relatively weak acid with respect to the acid generator uponirradiation with active light or radiation can be used.

Preferred examples of the basic compound include compounds havingstructures represented by the following Formulae (A) to (E).

In General Formulae (A) and (E),

R²⁰⁰, R²⁰¹, and R²⁰² may be the same as or different from each other,and each represent a hydrogen atom, an alkyl group (preferably having 1to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20carbon atoms), or an aryl group (having 6 to 20 carbon atoms), and R²⁰¹and R²⁰² may be bonded to each other to form a ring.

R²⁰³, R²⁰⁴, R²⁰⁵, and R²⁰⁶ may be the same as or different from eachother, and each represent an alkyl group having 1 to 20 carbon atoms.

With regard to the alkyl group, the alkyl group having a substituent ispreferably an aminoalkyl group having 1 to 20 carbon atoms, ahydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl grouphaving 1 to 20 carbon atoms.

The alkyl groups in General Formulae (A) and (E) are more preferablyunsubstituted.

Preferred examples of the compound include guanidine, aminopyrrolidine,pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine,and piperidine. More preferred examples of the compound include acompound having an imidazole structure, a diazabicyclo structure, anonium hydroxide structure, an onium carboxylate structure, atrialkylamine structure, an aniline structure, or a pyridine structure;an alkylamine derivative having a hydroxyl group and/or an ether bond;and an aniline derivative having a hydroxyl group and/or an ether bond.

Specific preferred examples of the compound include the compoundsexemplified in [0379] of US2012/0219913A1.

Preferred examples of the basic compound include an amine compoundhaving a phenoxy group, an ammonium salt compound having a phenoxygroup, an amine compound containing a sulfonic ester group, and anammonium salt compound having a sulfonic ester group.

These basic compounds may be used singly or in combination of two ormore kinds thereof.

The composition of the present invention may or may not contain thebasic compound, but in a case where it contains the basic compound, thecontent of the basic compound is usually 0.001% to 10% by mass, andpreferably 0.01% to 5% by mass, with respect to the solid content of thecomposition.

The ratio between the acid generator to the basic compound to be used inthe composition, in terms of acid generator/basic compound (molarratio), is preferably 2.5 to 300, more preferably 5.0 to 200, and stillmore preferably 7.0 to 150.

The low molecular compound (hereinafter referred to as a “compound (C)”)which has a nitrogen atom and a group that leaves by the action of anacid is preferably an amine derivative having a group that leaves by theaction of an acid on a nitrogen atom.

As the group that leaves by the action of an acid, an acetal group, acarbonate group, a carbamate group, a tertiary ester group, a tertiaryhydroxyl group, or a hemiaminal ether group are preferable, and acarbamate group or a hemiaminal ether group is particularly preferable.

The molecular weight of the compound (C) is preferably 100 to 1,000,more preferably 100 to 700, and particularly preferably 100 to 500.

The compound (C) may have a carbamate group having a protecting group ona nitrogen atom. The protecting group constituting the carbamate groupcan be represented by the following General Formula (d-1).

In General Formula (d-1),

R_(b)'s each independently represent a hydrogen atom, an alkyl group(preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferablyhaving 3 to 30 carbon atoms), an aryl group (preferably having 3 to 30carbon atoms), an aralkyl group (preferably having 1 to 10 carbonatoms), or an alkoxyalkyl group (preferably having 1 to 10 carbonatoms). R_(b)'s may be linked to each other to form a ring.

The alkyl group, the cycloalkyl group, the aryl group, or the aralkylgroup represented by R_(b) may be substituted with a functional groupsuch as a hydroxyl group, a cyano group, an amino group, a pyrrolidinogroup, a piperidino group, a morpholino group, and an oxo group, analkoxy group, or a halogen atom. This shall apply to the alkoxyalkylgroup represented by R_(b).

R_(b) is preferably a linear or branched alkyl group, a cycloalkylgroup, or an aryl group, and more preferably a linear or branched alkylgroup, or a cycloalkyl group.

Examples of the ring formed by the mutual linking of two R_(b)'s includean alicyclic hydrocarbon group, an aromatic hydrocarbon group, aheterocyclic hydrocarbon group, and derivatives thereof.

Examples of the specific structure of the group represented by GeneralFormula (d-1) include, but are not limited to, structures disclosed in[0466] of US2012/0135348A1.

It is particularly preferable that the compound (C) has a structure ofthe following General Formula (6).

In General Formula (6), R_(a) represents a hydrogen atom, an alkylgroup, a cycloalkyl group, an aryl group, or an aralkyl group. When 1 is2, two R_(a)'s may be the same as or different from each other. TwoR_(a)'s may be linked to each other to form a heterocycle together withthe nitrogen atom in the formula. The heterocycle may contain a heteroatom other than the nitrogen atom in the formula.

R_(b) has the same meaning as R_(b) in General Formula (d-1), andpreferred examples are also the same.

l represents an integer of 0 to 2, and m represents an integer of 1 to3, satisfying 1+m =3.

In General Formula (6), the alkyl group, the cycloalkyl group, the arylgroup, and the aralkyl group as R_(a) may be substituted with the samegroups as the group mentioned above as a group which may be substitutedin the alkyl group, the cycloalkyl group, the aryl group, and thearalkyl group as R_(b).

Specific examples of the alkyl group, the cycloalkyl group, the arylgroup, and the aralkyl group (such the alkyl group, a cycloalkyl group,an aryl group, and aralkyl group may be substituted with the groups asdescribed above) of R_(a) include the same groups as the specific ofexamples as described above with respect to R_(b).

Specific examples of the particularly preferred compound (C) in thepresent invention include, but are not limited to, the compoundsdisclosed in [0475] of US2012/0135348A1.

The compounds represented by General Formula (6) can be synthesized inaccordance with JP2007-298569A, JP2009-199021A, and the like.

In the present invention, the low molecular compound (C) having a groupthat leaves by the action of an acid on a nitrogen atom may be usedsingly or in combination of two or more kinds thereof.

The content of the compound (C) in the composition of the presentinvention is preferably 0.001% to 20% by mass, more preferably 0.001% to10% by mass, and still more preferably 0.01% to 5% by mass, with respectto the total solid content of the composition.

The basic compound whose basicity is reduced or lost upon irradiationwith active light or radiation (hereinafter also referred to as a“compound (PA)”) is a compound which has a functional group with protonacceptor properties, and decomposes under irradiation with active lightor radiation to exhibit deterioration in proton acceptor properties, noproton acceptor properties, or a change from the proton acceptorproperties to acid properties.

The functional group with proton acceptor properties refers to afunctional group having a group or an electron which is capable ofelectrostatically interacting with a proton, and for example, means afunctional group with a macrocyclic structure, such as a cyclicpolyether, or a functional group containing a nitrogen atom having anunshared electron pair not contributing to π-conjugation. The nitrogenatom having an unshared electron pair not contributing to π-conjugationis, for example, a nitrogen atom having a partial structure representedby the following formula.

Unshared Electron Pair

Preferred examples of the partial structure of the functional group withproton acceptor properties include crown ether, azacrown ether, primaryto tertiary amines, pyridine, imidazole, and pyrazine structures.

The compound (PA) decomposes upon irradiation with active light orradiation to generate a compound exhibiting deterioration in protonacceptor properties, no proton acceptor properties, or a change from theproton acceptor properties to acid properties. Here, exhibitingdeterioration in proton acceptor properties, no proton acceptorproperties, or a change from the proton acceptor properties to acidproperties means a change of proton acceptor properties due to theproton being added to the functional group with proton acceptorproperties, and specifically a decrease in the equilibrium constant atchemical equilibrium when a proton adduct is generated from the compound(PA) having the functional group with proton acceptor properties and theproton.

The proton acceptor properties can be confirmed by carrying out pHmeasurement.

In the present invention, the acid dissociation constant pKa of thecompound generated by the decomposition of the compound (PA) uponirradiation with active light or radiation preferably satisfies pKa<−1,more preferably −13<pKa<−1, and still more preferably −13<pKa<−3.

In the present invention, the acid dissociation constant pKa indicatesan acid dissociation constant pKa in an aqueous solution, and isdescribed, for example, in Chemical Handbook (II) (Revised 4^(th)Edition, 1993, compiled by the Chemical Society of Japan, MaruzenCompany, Ltd.), and a lower value thereof indicates higher acidstrength. Specifically, the pKa in an aqueous solution may be measuredby using an infinite-dilution aqueous solution and measuring the aciddissociation constant at 25° C., or a value based on the Hammettsubstituent constants and the database of publicly known literature datacan also be obtained by computation using the following softwarepackage 1. All the values of pKa described in the present specificationindicate values determined by computation using this software package.

Software package 1: Advanced Chemistry Development (ACD/Labs) Software V8.14 for Solaris (1994-2007 ACD/Labs).

The compound (PA) generates a compound represented by the followingGeneral Formula (PA-1), for example, as the proton adduct generated bydecomposition upon irradiation with active light or radiation. Thecompound represented by General Formula (PA-1) is a compound exhibitingdeterioration in proton acceptor properties, no proton acceptorproperties, or a change from the proton acceptor properties to acidproperties since the compound has a functional group with protonacceptor properties as well as an acidic group, as compared with thecompound (PA).Q-A-(X)_(n)—B—R  (PA-1)

In General Formula (PA-1),

Q represents —SO₃H, —CO₂H, or —W₁NHW₂R_(f), in which R_(f) represents analkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group(preferably having 3 to 20 carbon atoms), or an aryl group (preferablyhaving 6 to 30 carbon atoms), and W₁ and W₂ each independently represent—SO₂— or —CO—.

A represents a single bond or a divalent linking group.

X represents —SO₂— or —CO—.

n is 0 or 1.

B represents a single bond, an oxygen atom, or —N(R_(x))R_(y)—, in whichR_(x) represents a hydrogen atom or a monovalent organic group, andR_(y) represents a single bond or a divalent organic group, providedthat R_(x) may be bonded to R_(y) to form a ring or may be bonded to Rto form a ring.

R represents a monovalent organic group having a functional group withproton acceptor properties.

General Formula (PA-1) will be described in more detail.

The divalent linking group in A is preferably an alkylene group havingat least one fluorine atom, and more preferably perfluoroalkylene groupssuch as a perfluoroethylene group, a perfluoropropylene group, and aperfluorobutylene group.

Examples of the monovalent organic group in R_(x) include an alkylgroup, a cycloalkyl group, an aryl group, an aralkyl group, and analkenyl group, and these groups may further have a substituent.

The alkyl group in R_(x) is preferably a linear or branched alkyl grouphaving 1 to 20 carbon atoms, and may have an oxygen atom, a sulfur atom,or a nitrogen atom in the alkyl chain.

The cycloalkyl group in R_(x) is preferably a monocyclic or polycycliccycloalkyl group having 3 to 20 carbon atoms, and may have an oxygenatom, a sulfur atom, or a nitrogen atom in the ring.

The aryl group in R_(x) is preferably an aryl group having 6 to 14carbon atoms, and examples thereof include a phenyl group and a naphthylgroup.

The aralkyl group in R_(x) is preferably an aralkyl group having 7 to 20carbon atoms, and examples thereof include a benzyl group and aphenethyl group.

The alkenyl group in R_(x) is preferably an alkenyl group having 3 to 20carbon atoms, and examples thereof include a vinyl group, an allylgroup, and a styryl group.

Preferred examples of the divalent organic group in R_(y) include analkylene group.

Examples of the ring structure which may be formed by the mutual bondingof R_(x) and R_(y) include 5- to 10-membered rings containing a nitrogenatom.

The functional group with proton acceptor properties in R is asdescribed above.

The organic group having such a structure is preferably an organic grouphaving 4 to 30 carbon atoms, and examples thereof include an alkylgroup, a cycloalkyl group, an aryl group, an aralkyl group, and analkenyl group.

The alkyl group and the like in the alkyl group, the cycloalkyl group,the aryl group, the aralkyl group, or the alkenyl group containing afunctional group with proton acceptor properties or an ammonium group inR are the same as the alkyl group and the like as mentioned as R_(x),respectively.

When B is —N(R_(x))R_(y)—, it is preferable that R and R_(x) are bondedto each other to form a ring. The number of carbon atoms which form aring is preferably 4 to 20, the ring may be monocyclic or polycyclic,and an oxygen atom, and a sulfur atom, or a nitrogen atom may beincluded in the ring.

Examples of the monocyclic structure include 4- to 8-membered rings,each containing a nitrogen atom. Examples of the polycyclic structureinclude structures formed by a combination of two, or three or moremonocyclic structures.

R_(f) in —W₁NHW₂R_(f) represented by Q is preferably a perfluoroalkylgroup having 1 to 6 carbon atoms. Further, it is preferable that atleast one of W₁ or W₂ is —SO₂—.

The compound (PA) is preferably an ionic compound. The functional groupwith proton acceptor properties may be contained in an anion moiety or acation moiety, and it is preferable that the functional group iscontained in an anion moiety.

Preferred examples of the compound (PA) include compounds represented bythe following General Formulae (4) to (6).R_(f)—W₂—N⁻—W₁-A-(X)_(n)—B—R[C]⁺  (4)R—SO₃ ⁻[C]⁺  (5)R—CO₂ ⁻[C]⁺  (6)

In General Formulae (4) to (6), A, X, n, B, R, R_(f), W₁, and W₂ eachhave the same definitions as those, respectively, in General Formula(PA-1).

C⁺ represents a counter cation.

The counter cation is preferably an onium cation. More specifically,preferred examples thereof include the sulfonium cations described asS⁺(R₂₀₁)(R₂₀₂)(R₂₀₃) in General Formula (ZI) and the iodonium cationsdescribed as I⁺(R₂₀₄)(R₂₀₅) in General Formula (ZII) with regard to theacid generator.

Specific examples of the compound (PA) include the compounds exemplifiedin [0280] of US2011/0269072A1.

Furthermore, in the present invention, compounds (PA) other than acompound which generates the compound represented by General Formula(PA-1) can also be appropriately selected. For example, a compoundcontaining a proton acceptor moiety at its cation moiety may be used asan ionic compound. More specific examples thereof include a compoundrepresented by the following General Formula (7).

In the formula, A represents a sulfur atom or an iodine atom.

m represents 1 or 2 and n represents 1 or 2, provided that m+n=3 when Ais a sulfur atom and that m+n=2 when A is an iodine atom.

R represents an aryl group.

R_(N) represents an aryl group substituted with the functional groupwith proton acceptor properties, and X⁻ represents a counter anion.

Specific examples of X⁻ include the same anions as those of the acidgenerators as described above.

Specific preferred examples of the aryl group of R and R_(N) include aphenyl group.

Specific examples of the functional group with proton acceptorproperties contained in R_(N) are the same as those of the functionalgroup with proton acceptor properties as described above in Formula(PA-1).

Specific examples of the ionic compounds having a proton acceptor siteat a cationic moiety include the compounds exemplified in [0291] ofUS2011/0269072A1.

Furthermore, such compounds can be synthesized, for example, withreference to the methods described in JP2007-230913A, JP2009-122623A,and the like.

The compound (PA) may be used singly or in combination of two or morekinds thereof.

The content of the compound (PA) is preferably 0.1% to 10% by mass, andmore preferably 1% to 8% by mass, with respect to the total solidcontent of the composition.

In the composition of the present invention, an onium salt which becomesa relatively weak acid with respect to the acid generator can be used asan acid diffusion control agent.

In a case of mixing the acid generator and the onium salt that generatesan acid which is a relatively weak acid with respect to an acidgenerated from the acid generator, and then using the mixture, when theacid generated from the acid generator upon irradiation with activelight or radiation collides with an onium salt having an unreacted weakacid anion, a weak acid is discharged by salt exchange, therebygenerating an onium salt having a strong acid anion. In this process,the strong acid is exchanged with a weak acid having a lower catalyticability, and therefore, the acid is deactivated in appearance, and thus,it is possible to carry out the control of acid diffusion.

As the onium salt which becomes a relatively weak acid with respect tothe acid generator, compounds represented by the following GeneralFormulae (d1-1) to (d1-3) are preferable.

In the formulae, R⁵¹ is a hydrocarbon group which may have asubstituent, Z^(2c) is a hydrocarbon group (provided that carbonadjacent to S is not substituted with a fluorine atom) having 1 to 30carbon atoms, which may have a substituent, R⁵² is an organic group, Y³is a linear, branched, or cyclic alkylene group or arylene group, Rf isa hydrocarbon group containing a fluorine atom, and M⁺'s are eachindependently a sulfonium or iodonium cation.

Preferred examples of the sulfonium cation or the iodonium cationrepresented by M⁺ include the sulfonium cations exemplified by GeneralFormula (ZI) and the iodonium cations exemplified by General Formula(ZII).

Preferred examples of the anionic moiety of the compound represented byGeneral Formula (d1-1) include the structures exemplified in paragraph[0198] of JP2012-242799A.

Preferred examples of the anionic moiety of the compound represented byGeneral Formula (d1-2) include the structures exemplified in paragraph[0201] ofJP2012-242799A.

Preferred examples of the anionic moiety of the compound represented byGeneral Formula (d1-3) include the structures exemplified in paragraphs[0209] and [0210] of JP2012-242799A.

The onium salt which becomes a relatively weak acid with respect to theacid generator may be a compound (hereinafter also referred to as a“compound (CA)”) having a cationic moiety (C) and an anionic moiety inthe same molecule, in which the cationic moiety and the anionic moietyare linked to each other through a covalent bond.

As the compound (CA), a compound represented by any one of the followingGeneral Formulae (C-1) to (C-3) is preferable.

In General Formulae (C-1) to (C-3),

R₁, R₂, and R₃ represent a substituent having 1 or more carbon atoms.

L₁ represents a divalent linking group that links a cationic moiety withan anionic moiety, or a single bond.

—X⁻ represents an anionic moiety selected from —COO⁻, —SO₃ ⁻, —SO₂ ⁻,and —N⁻—R₄. R₄ represents a monovalent substituent having a carbonylgroup: —C(═O)—, a sulfonyl group: —S(═O)₂—, or a sulfinyl group: —S(═O)—at a site for linking to an adjacent N atom.

-   -   R₁, R₂, R₃, R₄, and L₁ may be bonded to one another to form a        ring structure. Further, in (C-3), two members out of R₁ to R₃        may be combined to form a double bond with an N atom.

Examples of the substituent having 1 or more carbon atoms in R₁ to R₃include an alkyl group, a cycloalkyl group, an aryl group, analkyloxycarbonyl group, a cycloalkyloxycarbonyl group, anaryloxycarbonyl group, an alkylaminocarbonyl group, acycloalkylaminocarbonyl group, and an arylaminocarbonyl group, andpreferably an alkyl group, a cycloalkyl group, and an aryl group.

Examples of L₁ as a divalent linking group include a linear or branchedalkylene group, a cycloalkylene group, an arylene group, a carbonylgroup, an ether bond, ester bond, amide bond, a urethane bond, a ureabond, and a group formed by a combination of two or more kinds of thesegroups. L₁ is more preferably alkylene group, an arylene group, an etherbond, ester bond, and a group formed by a combination of two or morekinds of these groups.

Preferred examples of the compound represented by General Formula (C-1)include the compounds exemplified in paragraphs [0037] to [0039] ofJP2013-6827A and paragraphs [0027] to [0029] of JP2013-8020A.

Preferred examples of the compound represented by General Formula (C-2)include the compounds exemplified in paragraphs [0012] to [0013] ofJP2012-189977A.

Preferred examples of the compound represented by General Formula (C-3)include the compounds exemplified in paragraphs [0029] to [0031] ofJP2012-252124A.

The content of the onium salt which becomes a relatively weak acid withrespect to the acid generator is preferably 0.5% to 10.0% by mass, morepreferably 0.5% to 8.0% by mass, and still more preferably 1.0% to 8.0%by mass, with respect to the solid content of the composition.

[5] Solvent

The composition of the present invention usually contains a solvent.

Examples of the solvent which can be used in the preparation of thecomposition include organic solvents such as alkylene glycol monoalkylether carboxylate, alkylene glycol monoalkyl ether, alkyl lactate ester,alkyl alkoxypropionate, a cyclic lactone (preferably having 4 to 10carbon atoms), a monoketone compound (preferably having 4 to 10 carbonatoms) which may have a ring, alkylene carbonate, alkyl alkoxyacetate,and alkyl pyruvate. Further, methyl 2-hydroxyisobutyrate may also beused as a solvent.

Specific examples of these solvents include ones described in, forexample, [0441] to [0455] in the specification of US2008/0187860A.

In the present invention, a mixed solvent obtained by mixing a solventcontaining a hydroxyl group and a solvent containing no hydroxyl groupin the structure may be used as the organic solvent.

As the solvent containing a hydroxyl group and the solvent containing nohydroxyl group, the aforementioned exemplary compounds can beappropriately selected and used, but as the solvent containing ahydroxyl group, an alkylene glycol monoalkyl ether, alkyl lactate, andthe like are preferable, and propylene glycol monomethyl ether (PGME,alternative name: 1-methoxy-2-propanol) and ethyl lactate are morepreferable. Further, as the solvent containing no hydroxyl group,alkylene glycol monoalkyl ether acetate, alkyl alkoxy propionate, amonoketone compound which may contain a ring, cyclic lactone, alkylacetate, and the like are preferable. Among these, propylene glycolmonomethyl ether acetate (PGMEA, alternative name:1-methoxy-2-acetoxypropane), ethyl ethoxypropionate, 2-heptanone,γ-butyrolactone, cyclohexanone, and butyl acetate are particularlypreferable, and propylene glycol monomethyl ether acetate, ethylethoxypropionate, and 2-heptanone are most preferable.

The mixing ratio (based on mass) of the solvent containing a hydroxylgroup and the solvent containing no hydroxyl group is 1/99 to 99/1,preferably 10/90 to 90/10, and more preferably 20/80 to 60/40. A mixedsolvent whose proportion of the solvent containing no hydroxyl group is50% by mass or more is particularly preferable from the viewpoint ofcoating evenness.

The solvent preferably contains propylene glycol monomethyl etheracetate, and is preferably a solvent composed of propylene glycolmonomethyl ether acetate singly or a mixed solvent of two or more kindsof solvents including propylene glycol monomethyl ether acetate.

[6] Surfactant

The composition of the present invention may or may not further containa surfactant. In a case where the composition contains the surfactant,it more preferably contains any one of fluorine- and/or silicon-basedsurfactants (a fluorine-based surfactant, a silicon-based surfactant,and a surfactant having both a fluorine atom and a silicon atom), or twoor more kinds thereof.

By incorporating the surfactant into the composition of the presentinvention, it becomes possible to provide a resist pattern havingimproved adhesiveness and decreased development defects with goodsensitivity and resolution when an exposure light source of 250 nm orless, and particularly 220 nm or less, is used.

Examples of the fluorine- and/or silicon-based surfactants include thesurfactants described in paragraph [0276] in the specification ofUS2008/0248425A.

In addition, in the present invention, surfactants other than thefluorine- and/or silicon-based surfactants described in paragraph [0280]in the specification of US2008/0248425A can also be used.

These surfactants may be used singly or in combination of a fewsurfactants.

In a case where the composition of the present invention contains asurfactant, the amount of the surfactant to be used is preferably0.0001% to 2% by mass, and more preferably 0.0005% to 1% by mass, withrespect to the total solid content of the composition.

On the other hand, by setting the amount of the surfactant to be addedto 10 ppm or less with respect to the total amount (excluding thesolvent) of the composition, the hydrophobic resin is more unevenlydistributed to the surface, so that the resist film surface can be mademore hydrophobic, which can enhance the water tracking properties duringthe liquid immersion exposure.

[7] Other Additives

The composition of the present invention may or may not contain an oniumcarboxylate salt. Examples of such an onium carboxylate salt includethose described in [0605] to [0606] in the specification ofUS2008/0187860A.

The onium carboxylate salt can be synthesized by reacting sulfoniumhydroxide, iodonium hydroxide, ammonium hydroxide and carboxylic acidwith silver oxide in a suitable solvent.

In the case where the composition of the present invention contains theonium carboxylate salt, the content of the salt is generally 0.1% to 20%by mass, preferably 0.5% to 10% by mass, and more preferably 1% to 7% bymass, with respect to the total solid content of the composition.

The composition of the present invention may further contain an aciddiffusing agent, a cross-linking agent, a dye, a plasticizer, a lightsensitizer, a light absorbent, an alkali-soluble resin, a dissolutioninhibitor, a compound promoting solubility in a developer (for example,a phenol compound with a molecular weight of 1,000 or less, an alicyclicor aliphatic compound having a carboxyl group), and the like, ifdesired.

Such a phenol compound having a molecular weight of 1,000 or less may beeasily synthesized by those skilled in the art with reference to themethod disclosed in, for example, JP1992-122938A (JP-H04-122938A),JP1990-28531A (JP-H02-28531A), U.S. Pat. No. 4,916,210A, EP219294B, andthe like.

Specific examples of the alicyclic compound or aliphatic compound havinga carboxyl group include, but not limited to, a carboxylic acidderivative having a steroid structure such as a cholic acid, deoxycholicacid or lithocholic acid, an adamantane carboxylic acid derivative,adamantane dicarboxylic acid, cyclohexane carboxylic acid, andcyclohexane dicarboxylic acid.

The composition of the present invention is preferably a resist filmhaving a film thickness of 80 nm or less from the viewpoint of improvingthe resolving power. It is possible to set the film thickness by settingthe concentration of the solid content in the composition to anappropriate range, thus to have a suitable viscosity and improve acoating property and a film forming property.

The concentration of the solid content of the composition according tothe present invention is usually 1.0% to 10% by mass, preferably 2.0% to5.7% by mass, and more preferably 2.0% to 5.3% by mass. By setting theconcentration of the solid content to these ranges, it is possible touniformly coat the resist solution on a substrate and additionally, itis possible to form a resist pattern having excellent line widthroughness. The reason is not clear; however, it is considered that, bysetting the concentration of the solid content to 10% by mass or less,and preferably 5.7% by mass or less, the aggregation of materials,particularly the photoacid generator, in the resist solution issuppressed and, as the result, it is possible to form a uniform resistfilm.

The concentration of the solid content is the weight percentage of theweight of other resist components excluding the solvent with respect tothe total weight of the composition.

The composition of the present invention is used by dissolving thecomponents in a predetermined organic solvent, and preferably in themixed solvent, filtering the solution through a filter, and thenapplying the filtered solution on a predetermined support (substrate).The filter for use in filtration is preferably apolytetrafluoroethylene-, polyethylene- or nylon-made filter having apore size of 0.1 μm or less, more preferably 0.05 μm or less, and stillmore preferably 0.03 μm or less. In the filtration through a filter, asdescribed in, for example, JP2002-62667A, circulating filtration may becarried out, or the filtration may be carried out by connecting pluralkinds of filters in series or in parallel. In addition, the compositionmay be filtered a plurality of times. Furthermore, the composition maybe subjected to a deaeration treatment or the like before or afterfiltration through a filter.

The composition of the present invention is related to anactive-light-sensitive or radiation-sensitive resin composition whoseproperties change by undergoing a reaction upon irradiation with activelight or radiation. More specifically, the present invention relates toan active-light-sensitive or radiation-sensitive resin composition whichcan be used in for a step of manufacturing a semiconductor such as anIC, for manufacture of a circuit board for a liquid crystal, a thermalhead, or the like, the manufacture of a mold structure for imprinting,or a other photofabrication processes, or used in a planographicprinting plate or an acid-curable composition.

[8] Pattern Forming Method

Next, the pattern forming method of the present invention will bedescribed.

The pattern forming method of the present invention includes at leastthe following steps:

(i) a step of forming a film (an active-light-sensitive orradiation-sensitive resin composition film, a composition film, or aresist film) on a substrate, using the composition of the presentinvention;

(ii) a step of irradiating (exposing) the film with active light orradiation (exposing step); and

(iii) a step of developing the film irradiated with active light orradiation, using a developer (developing step).

The exposure in the step (ii) may be liquid immersion exposure.

The pattern forming method of the present invention may include (iv) aheating step after (ii) the exposing step.

The pattern forming method of the present invention may include (ii) theexposing step in plural times.

The pattern forming method of the present invention may include (iv) theheating step in plural times.

The resist film in the present invention is a film formed from theaforementioned composition of the present invention, and morespecifically, it is preferably a film formed by applying the compositiononto a substrate. In the pattern forming method of the presentinvention, the step of forming a film from the composition on asubstrate, the step of exposing the film, and the developing step can becarried out by a generally known method.

The substrate on which the film is formed in the present invention isnot particularly limited, and an inorganic substrate such as silicon,SiO₂, and SiN, a coating type inorganic substrate such as SOG, or asubstrate generally used in a process for manufacturing a semiconductorsuch as an IC, in a process for manufacture of a circuit board for aliquid crystal, a thermal head, or the like, and in other lithographicprocesses of photofabrication can be used. If desired, an antireflectionfilm may further be formed between the resist film and the substrate. Asthe antireflection film, a known organic or inorganic antireflectionfilm can be appropriately used.

It is also preferable that the method includes a pre-heating step (PB;Prebake) after forming a film and before the exposing step.

Moreover, it is also preferable that the method includes a step ofheating after exposure (PEB: Post Exposure Bake) after the exposing stepand before the developing step.

For both of PB and PEB, the heating is preferably carried out at aheating temperature of 70° C. to 130° C., and more preferably 80° C. to120° C.

The heating time is preferably 30 to 300 seconds, more preferably 30 to180 seconds, and still more preferably 30 to 90 seconds.

Heating may be carried out using a means installed in an ordinaryexposure-and-development machine, or may also be carried out using a hotplate or the like.

The baking accelerates the reaction in the exposed areas, and thus, thesensitivity and the pattern profile are enhanced.

The light source wavelength used in the exposure device in the presentinvention is not particularly limited, and examples thereof includeinfrared rays, visible light, ultraviolet rays, far ultraviolet rays,extreme ultraviolet rays, X-rays, and electron beams, for example, farultraviolet rays at a wavelength of preferably 250 nm or less, morepreferably 220 nm or less, and particularly preferably 1 to 200 nm,specifically a KrF excimer laser (248 nm), an ArF excimer laser (193nm), an F₂ excimer laser (157 nm), X-rays, EUV (13 nm), electron beams,and the like, with the KrF excimer laser, the ArF excimer laser, EUV, orthe electron beams being preferable, and the ArF excimer laser beingmore preferable.

Furthermore, a liquid immersion exposure method can be applied to thestep of carrying out exposure of the present invention. It is possibleto combine the liquid immersion exposure method with super-resolutiontechnology such as a phase shift method and a modified illuminationmethod. The liquid immersion exposure can be carried out by the methoddescribed in, for example, paragraphs [0594] to [0601] ofJP2013-242397A.

Moreover, if the receding contact angle of the resist film formed usingthe composition in the present invention is extremely small, the resistfilm cannot be suitably used in a case of carrying out the exposurethrough a liquid immersion medium. Further, the effect of reducingwatermark defect cannot be sufficiently exhibited. In order to realize afavorable receding contact angle, it is preferable to incorporate thehydrophobic resin (D) into the composition. Alternatively, a film(hereinafter also referred to as a “top coat”) sparingly soluble in animmersion liquid, which is formed of the hydrophobic resin (D), may beformed on the upper layer of the resist film. The functions required forthe top coat are coating suitability on the upper layer part of a resistfilm, and sparing solubility in an immersion liquid. It is preferablethat the top coat is not mixed with the composition film and can beuniformly applied onto the upper layer of a composition film.

The top coat is not particularly limited, and top coats known in therelated art can be formed according to the methods known in the relatedart, and can be formed, for example, according to the description inparagraphs [0072] to [0082] of JP2014-059543A.

In a case where a developer containing an organic solvent is used in thedeveloping step which will be described later, it is preferable that atop coat containing the basic compound described in JP2013-61648A, forexample, is formed on a resist film.

In the liquid immersion exposure step, it is necessary for the immersionliquid to move on a wafer following the movement of an exposure headwhich scans the wafer at a high speed to form an exposure pattern.Therefore, the contact angle of the immersion liquid for the resist filmin a dynamic state is important, and the resist is required to have aperformance of allowing the immersion liquid to follow the high-speedscanning of an exposure head with no remaining of a liquid droplet.

The developer used in the step of developing the active-light-sensitiveor radiation-sensitive resin composition film formed using thecomposition of the present invention is not particularly limited, but analkali developer or a developer containing an organic solvent(hereinafter also referred to as an organic developer), for example, canbe used.

The alkali developer is not particularly limited, and examples thereofinclude the alkali developers described in paragraph [0460] ofJP2014-048500A.

As a rinsing liquid in the rinsing treatment to be carried out after thealkali development, pure water is used, and an appropriate amount of asurfactant may also be added and used.

Incidentally, after the development treatment or the rinsing treatment,a treatment for removing the developer or the rinsing liquid adhering onthe pattern by a supercritical fluid may be carried out.

As the organic developer, a polar solvent such as a ketone-basedsolvent, an ester-based solvent, an alcohol-based solvent, anamide-based solvent, and an ether-based solvent, or a hydrocarbon-basedsolvent can be used.

Examples of the ketone-based solvent include 1-octanone, 2-octanone,1-nonanone, 2-nonanone, acetone, 2-heptanone (methyl amyl ketone),4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone,methylcyclohexanone, phenyl acetone, methyl ethyl ketone, methylisobutyl ketone, acetyl acetone, acetonyl acetone, ionone, diacetonylalcohol, acetyl carbinol, acetophenone, methyl naphthyl ketone,isophorone, and propylene carbonate.

Examples of the ester-based solvent include methyl acetate, butylacetate, ethyl acetate, isopropyl acetate, pentyl acetate, isopentylacetate, amyl acetate, propylene glycol monomethyl ether acetate,ethylene glycol monoethyl ether acetate, diethylene glycol monobutylether acetate, diethylene glycol monoethyl ether acetate,ethyl-3-ethoxypropionate, 3-methoxybutyl acetate,3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butylformate, propyl formate, ethyl lactate, butyl lactate, and propyllactate.

Examples of the alcohol-based solvent include alcohols such as methylalcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butylalcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol,n-hexyl alcohol, n-heptyl alcohol, n-octyl alcohol, and n-decanol;glycol-based solvents such as ethylene glycol, diethylene glycol, andtriethylene glycol; and glycol ether-based solvents such as ethyleneglycol monomethyl ether, propylene glycol monomethyl ether, ethyleneglycol monoethyl ether, propylene glycol monoethyl ether, diethyleneglycol monomethyl ether, triethylene glycol monoethyl ether, andmethoxymethyl butanol.

Examples of the ether-based solvent include dioxane and tetrahydrofuran,in addition to the glycol ether-based solvents above.

Examples of the amide-based solvent which can be used includeN-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide,hexamethylphosphoric triamide, and 1,3-dimethyl-2-imidazolidinone.

Examples of the hydrocarbon-based solvent include aromatichydrocarbon-based solvents such as toluene and xylene; and aliphatichydrocarbon-based solvents such as pentane, hexane, octane, and decane.

The above solvents can be used by mixing a plurality of the solvents orby mixing the solvent with water or solvents other than the solvents.However, in order to sufficiently exhibit the effects of the presentinvention, the moisture content in the entire developer is preferablyless than 10% by mass, but a developer having substantially no water ismore preferable.

That is, the amount of the organic solvent to be used with respect tothe organic developer is preferably from 90% by mass to 100% by mass,and more preferably from 95% by mass to 100% by mass, with respect tothe total amount of the developer.

In particular, the organic developer is preferably a developercontaining at least one organic solvent selected from the groupconsisting of a ketone-based solvent, an ester-based solvent, analcohol-based solvent, an amide-based solvent, and an ether-basedsolvent.

The vapor pressure of the organic developer at 20° C. is preferably 5kPa or less, more preferably 3 kPa or less, and particularly preferably2 kPa or less. By setting the vapor pressure of the organic developer to5 kPa or less, the evaporation of the developer on the substrate or in adeveloping cup is inhibited, the temperature uniformity in the wafersurface is improved, and as a result, the dimensional uniformity withina wafer surface is improved.

It is possible to add an appropriate amount of a surfactant to theorganic developer, if necessary.

The surfactant is not particularly limited, but it is possible to use,for example, ionic or non-ionic fluorine-based and/or silicon-basedsurfactants, or the like. Examples of the fluorine-based and/orsilicon-based surfactant include the surfactants described inJP1987-36663A (JP-S62-36663A), JPI986-226746A (JP-S61-226746A),JP1986-226745A (JP-S61-226745A), JP1987-170950A (JP-S62-170950A),JP1988-34540A (JP-S63-34540A), JP1995-230165A (JP-H7-230165A),JPI996-62834A (JP-H8-62834A), JP1997-54432A (JP-H9-54432A), JP1997-5988A(JP-H9-5988A), U.S. Pat. Nos. 5,405,720A, 5,360,692A, 5,529,881A,5,296,330A, 5,436,098A, 5,576,143A, 5,294,511A, and 5,824,451A, andnon-ionic surfactants are preferable. The non-ionic surfactant is notparticularly limited, but it is more preferable to use a fluorine-basedsurfactant or a silicon-based surfactant.

The amount of the surfactant to be used is usually 0.001% to 5% by mass,preferably 0.005% to 2% by mass, and more preferably 0.01% to 0.5% bymass, with respect to the total amount of the developer.

The organic developer may also include a basic compound. Specific andpreferred examples of the basic compound which can be included in theorganic developer used in the present invention include the same ones asfor the basic compound which can be included in the aforementionedcomposition as the acid diffusion control agent.

As the developing method, for example, a method in which a substrate isimmersed in a tank filled with a developer for a certain period of time(a dip method), a method in which a developer is heaped up to thesurface of a substrate by surface tension and developed by stopping fora certain period of time (a paddle method), a method in which adeveloper is sprayed on the surface of a substrate (a spray method), amethod in which a developer is continuously discharged on a substratespun at a constant rate while scanning a developer discharging nozzle ata constant rate (a dynamic dispense method), or the like, can beapplied. Further, suitable ranges of the discharge pressure of thedeveloper to be discharged, methods for adjusting the discharge pressureof the developer, and the like are not particularly limited, and forexample, the ranges and the methods described in paragraphs [0631] to[0636] of JP2013-242397A can be used.

In the pattern forming method of the present invention, a step ofperforming development by using a developer containing an organicsolvent (organic solvent developing step) and a step of carrying outdevelopment by using an aqueous alkali-solution (alkali developing step)may be used in combination. Due to this combination, a finer pattern canbe formed.

In the present invention, an area with a low exposure intensity isremoved in the organic solvent developing step, and by further carryingout the alkali developing step, an area with a high exposure intensityis also removed. By virtue of a multiple development process in whichdevelopment is carried out a plurality of times in this way, a patterncan be formed by keeping only a region with an intermediate exposureintensity from being dissolved, so that a finer pattern than usual canbe formed (the same mechanism as in [0077] of JP2008-292975A).

In the pattern forming method of the present invention, the order of thealkali developing step and the organic solvent developing step is notparticularly limited, but the alkali development is more preferablycarried out before the organic solvent developing step.

It is preferable that the method includes a step of rinsing using arinsing liquid after the step of carrying out development using adeveloper including an organic solvent.

The rinsing liquid used in the rinsing step after the step of carryingout development using a developer including an organic solvent is notparticularly limited as long as the rinsing liquid does not dissolve theresist pattern, and a solution including a common organic solvent can beused. As the rinsing liquid, a rinsing liquid containing at least oneorganic solvent selected from the group consisting of ahydrocarbon-based solvent, a ketone-based solvent, an ester-basedsolvent, an alcohol-based solvent, an amide-based solvent, and anether-based solvent is preferably used.

Specific examples of the hydrocarbon-based solvent, the ketone-basedsolvent, the ester-based solvent, the alcohol-based solvent, theamide-based solvent, and the ether-based solvent are the same as thosedescribed for the developer containing an organic solvent.

After the developing step using a developer including an organicsolvent, it is more preferable to carry out a step of cleaning using arinsing liquid containing at least one organic solvent selected from thegroup consisting of a ketone-based solvent, an ester-based solvent, analcohol-based solvent, and an amide-based solvent, it is still morepreferable to carry out a step of cleaning using a rinsing liquidcontaining an alcohol-based solvent or an ester-based solvent, it isparticularly preferable to carry out a step of cleaning using a rinsingliquid containing a monohydric alcohol, and it is most preferable tocarry out a step of cleaning using a rinsing liquid containing amonohydric alcohol having 5 or more carbon atoms.

Here, examples of the monohydric alcohol used in the rinsing stepinclude linear, branched, or cyclic monohydric alcohols, andspecifically, 1-butanol, 2-butanol, 3-methyl-1-butanol, tert-butylalcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol(methylisobutyl carbinol), 1-heptanol, 1-octanol, 2-hexanol,cyclopentanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol,4-octanol, or the like can be used. Further, 1-hexanol, 2-hexanol,4-methyl-2-pentanol, 1-pentanol, 3-methyl-1-butanol, or the like can beused as a particularly preferred monohydric alcohol having 5 or morecarbon atoms.

The respective components in plural numbers may be mixed, or thecomponents may be mixed with an organic solvent other than the abovesolvents, and used.

The moisture content of the rinsing liquid is preferably 10% by mass orless, more preferably 5% by mass or less, and particularly preferably 3%by mass or less. By setting the moisture content to 10% by mass or less,good development characteristics can be obtained.

The vapor pressure at 20° C. of the rinsing liquid which is used afterthe step of carrying out development using a developer including anorganic solvent is preferably from 0.05 kPa to 5 kPa, more preferablyfrom 0.1 kPa to 5 kPa, and most preferably from 0.12 kPa to 3 kPa. Bysetting the vapor pressure of the rinsing liquid to a range from 0.05kPa to 5 kPa, the temperature uniformity within a wafer surface isimproved, and further, the dimensional uniformity within a wafer surfaceis enhanced by suppression of swelling due to the permeation of therinsing liquid.

The rinsing liquid can also be used after adding an appropriate amountof a surfactant thereto.

In the rinsing step, the wafer which has been subjected to developmentusing a developer including an organic solvent is subjected to acleaning treatment using the rinsing liquid including an organicsolvent. A method for the cleaning treatment is not particularlylimited, and for example, a method in which a rinsing liquid iscontinuously discharged on a substrate rotated at a constant rate (arotation application method), a method in which a substrate is immersedin a bath filled with a rinsing liquid for a certain period of time (adip method), a method in which a rinsing liquid is sprayed on asubstrate surface (a spray method), or the like, can be applied. Amongthese, a method in which a cleaning treatment is carried out using therotation application method, and a substrate is rotated at a rotationspeed of 2,000 rpm to 4,000 rpm after cleaning, thereby removing therinsing liquid from the substrate, is preferable. Further, it ispreferable that a heating step (Post Bake) is included after the rinsingstep. The residual developer and the rinsing liquid between and insidethe patterns are removed by the baking. The heating step after therinsing step is carried out at typically 40° C. to 160° C., andpreferably at 70° C. to 95° C., and typically for 10 seconds to 3minutes, and preferably for 30 seconds to 90 seconds.

It is preferable that various materials (for example, a developer, arinsing liquid, a composition for forming an antireflection film, and acomposition for forming a top coat) used in the active-light-sensitiveor radiation-sensitive resin composition of the present invention andthe pattern forming method of the present invention do not includeimpurities such as metals. The content of the metal components includedin these materials is preferably 10 ppm or less, more preferably 5 ppmor less, and still more preferably 1 ppm or less, but the material nothaving substantially metal components (within a detection limit of ameasurement device or less) is particularly preferable.

Examples of a method for removing impurities such as metals from thevarious materials include filtration using a filter. As for the filterpore diameter, the pore size is preferably 50 nm or less, morepreferably 10 nm or less, and still more preferably 5 nm or less. As forthe materials of a filter, a polytetrafluoroethylene-made filter, apolyethylene-made filter, and a nylon-made filter are preferable. In thestep of filtration using a filter, plural kinds of filters may beconnected in series or in parallel, and used. In the case of usingplural kinds of filters, a combination of filters having different porediameters and/or materials may be used. In addition, various materialsmay be filtered plural times, and a step of filtering plural times maybe a circulatory filtration step.

Moreover, examples of the method for reducing the impurities such asmetals included in the various materials include a method of selectingraw materials having a small content of metals as raw materialsconstituting various materials and subjecting raw materials constitutingvarious materials to filtration using a filter. In the preferredconditions for filtration using a filter, performed for raw materialsconstituting various materials are the same as described above.

In addition to filtration using a filter, removal of impurities by anadsorbing material may be carried out, or a combination of filtrationusing a filter and an adsorbing material may be used. As the adsorbingmaterial, known adsorbing materials may be used, and for example,inorganic adsorbing materials such as silica gel and zeolite, andorganic adsorbing materials such as activated carbon can be used.

Moreover, the present invention also relates to a method formanufacturing an electronic device, including the pattern forming methodof the present invention as described above, and an electronic devicemanufactured by the manufacturing method.

The electronic device of the present invention is suitably mounted onelectric or electronic equipment (home electronics, office automation(OA)-related equipment, media-related equipment, optical equipment,telecommunication equipment, and the like).

EXAMPLES

Hereinafter, the present invention will be described with reference toExamples, but the present invention is not limited thereto.

<Synthesis Example: Synthesis of Resin B-1>

122 parts by mass of cyclohexanone was heated at 80° C. under a nitrogenstream. While stirring this liquid, a mixed solution of 13.33 parts bymass of a monomer represented by the following structural formula M-1,10.21 parts by mass of a monomer represented by the following structuralformula M-2, 37.9 parts by mass of a monomer represented by thefollowing structural formula M-3, 226 parts by mass of cyclohexanone,and 2.85 parts by mass of dimethyl 2,2′-azobisisobutyrate [V-601,manufactured by Wako Pure Chemical Industries, Ltd.] was added dropwiseto the liquid for 6 hours. After completion of the dropwise addition,the mixture was further stirred at 80° C. for 2 hours. After being leftto be cooled, the reaction liquid was reprecipitated with a large amountof methanol/water (mass ratio of 9:1) and filtered, and the obtainedsolid was dried in vacuo to obtain 56 parts by mass of the followingresin B-1.

The weight-average molecular weight (Mw: in terms of polystyrene) of theobtained resin B-1, as determined by GPC (carrier: tetrahydrofuran(THF)), was as follows: Mw=9,300, and the dispersity was as follows:Mw/Mn=1.64. The compositional ratio (molar ratio; corresponding to therepeating units in order from the left side) measured by ¹³C-NMR(nuclear magnetic resonance) was 20/20/60.

Furthermore, by carrying out the same operation as in Synthesis Example1, the resins B-2 to B-12 described below were synthesized.

<Preparation of Resist Composition>

The components shown in Table 2 below were dissolved in the solventsshown in the same table to prepare solutions having a concentration ofthe solid content of 4% by mass, respectively, and these solutions werefiltered through a polyethylene filter having a pore size of 0.05 μm toprepare resist compositions (resist compositions of Examples andComparative Examples).

Furthermore, in Table 2 below, with respect to the acid generators, thenumerical values in parentheses represent blend amounts (g).Incidentally, in all of Examples and Comparative Examples, the blendamounts of the resins are each 10 g. Further, with respect to the basiccompounds, the numerical values in parentheses represent blend amounts(g). Further, with respect to the hydrophobic resins, the numericalvalues represent mass ratios. In addition, with respect to the solvents,the numerical values in parentheses represent blend amounts (g).Incidentally, in all of Examples and Comparative Examples eachcontaining a surfactant, the blend amount of the surfactant is 10 mg.

<Evaluation>

(Pattern Formation: ArF Liquid Immersion Exposure 1)

An organic antireflection film, ARC29SR (manufactured by Nissan ChemicalIndustries, Ltd.), was applied onto a silicon wafer and baked at 205° C.for 60 seconds to form an antireflection film having a film thickness of95 nm. The obtained resist composition was applied thereonto and baked(PB: Prebake) at 100° C. for 60 seconds to form a resist film having afilm thickness of 100 nm.

The obtained wafer was exposed through a 6% halftone mask having a pitchof 136 nm and a light shielding area of 35 nm, using an ArF excimerlaser liquid immersion scanner (manufactured by ASML; XTI700i, NA1.20,C-Quad, outer sigma 0.880, inner sigma 0.790, and XY deflection).Ultrapure water was used as an immersion liquid. Thereafter, the waferwas heated (PEB: Post Exposure Bake) at 85° C. for 60 seconds. Then, thewafer was developed by paddling it with an organic developer (butylacetate) for 30 seconds, and paddled and rinsed with a rinsing liquid[methylisobutyl carbinol (MIBC)] for 30 seconds. Then, the wafer wasspun at a rotation speed of 4,000 rpm for 30 seconds to form aline-and-space pattern having a pitch of 136 nm and a space width of 35nm.

(Pattern Formation: ArF Liquid Immersion Exposure 2)

An organic antireflection film, ARC29SR (manufactured by Nissan ChemicalIndustries, Ltd.), was applied onto a silicon wafer and baked at 205° C.for 60 seconds to form an antireflection film having a film thickness of95 nm. The obtained resist composition was applied thereonto and baked(PB: Prebake) at 100° C. for 60 seconds to form a resist film having afilm thickness of 100 nm.

The obtained wafer was exposed through a 6% halftone mask with a 1:1line-and-space pattern having a line width of 48 nm, using an ArFexcimer laser liquid immersion scanner (manufactured by ASML; XT 1700i,NA1.20, C-Quad, outer sigma 0.900, inner sigma 0.812, and XYdeflection). Ultrapure water was used as an immersion liquid.Thereafter, the wafer was heated (PEB: Post Exposure Bake) at 105° C.for 60 seconds. Then, the wafer was developed by paddling it with butylacetate for 30 seconds, and paddled and rinsed with a rinsing liquid[methylisobutyl carbinol (MIBC)] for 30 seconds. Then, the wafer wasspun at a rotation speed of 4,000 rpm for 30 seconds to form a 1:1line-and-space pattern having a line width of 48 nm.

(Evaluation of Depth of Focus (DOF))

At a exposure dose for forming a line-and-space pattern having a pitchof 136 nm and a space width of 35 nm under the exposure and developmentconditions in Pattern Formation (ArF Liquid Immersion Exposure 1) above,exposure and development were carried out by changing the conditions ofthe exposure focus at an interval of 10 nm in the focus direction, thespace line width (critical dimension (CD)) of each of the obtainedpatterns was measured using a line-width length-measuring dimensionscanning electron microscope SEM (S-9380, Hitachi, Ltd.), and a focuscorresponding to the minimum value or the maximum value in a curveobtained by plotting the respective CDs was defined as a best focus.When the focus was changed while being centered on the best focus, avariation width of the focus with which a space width of 35 nm±10% wasallowable, that is, a depth of focus (DOF) (nm) was calculated. Theresults are shown in Table 2 (DOF). A higher value of the depth of focusis more preferable.

(Evaluation of Line Width Roughness (LWR))

A line pattern (with a line width of 48 nm) at line/space=1/1 obtainedunder the exposure and development conditions for forming a pattern (ArFLiquid Immersion Exposure 2) was observed using a line-widthlength-measuring scanning electron microscope SEM (S-9380, manufacturedby Hitachi, Ltd.), and the line width was measured at 50 points within arange with an edge of 1 μm in the longitudinal direction of the linepattern. A standard deviation for the measurement differences wasdetermined to calculate 3σ (nm). The results (LWR) are shown in Table 2.A smaller value thereof indicates better performance.

TABLE 2 Acid Basic Hydrophobic Solvent Evaluation Evaluation generatorResin compound resin (Mass Surfactant item 1 item 2 (g) (10 g) (g) (g)ratio) (10 mg) DOF (nm) LWR (nm) Example 1 A-2 (1.5) B-1 C-5 (0.33) 4b(0.5) A1/B1 = None 105 4.4 80/20 Example 2 A-1 (1.4) B-2 C-1 (0.76) 1b(0.2) A1/A2 = None 110 4.2 70/30 Example 3 A-3 (1.5) B-3 C-2 (0.80) 4b(0.5) A1/B1 = None 100 4.5 90/10 Example 4 A-8 (1.9) B-4 C-7 (0.34) 1b(0.2) A1/A2 = None 125 4.0 70/30 Example 5 A-10 (1.4) B-5 C-8 (0.50) 3b(0.3) A1/B1 = None 105 4.4 90/10 Example 6 A-2 B-6 C-2 (0.80) 4b (0.5)A1 None 105 4.4 (0.2)/A-5 (1.5) Example 7 A-9 (1.5) B-7 C-9 (0.45) 2b(0.4) A1/B1 = W-2 105 4.3 90/10 Example 8 A-5 (2.0) B-8 C-2 5b (0.4) A1None 110 4.2 (0.40)/C-6 (0.21) Example 9 A-3 B-9 C-6 (0.42) 1b (0.2)A1/A2 = None 110 4.3 (0.5)/A-6 80/20 (1.2) Example 10 A-7 (1.4) B-10 C-3(0.32) 2b (0.4) A1/B2 = None 110 4.2 80/20 Example 11 A-4 (1.4) B-11 C-4(0.42) 5b (0.4) A1/A3 = W-1 120 4.1 95/5 Example 12 A-1 (1.4) B-12 C-1(0.76) 1b (0.2) A1/A2 = None 105 4.3 70/30 Example 13 A-1 (1.4) B-1 C-1(0.76) 1b (0.2) A1/A2 = None 105 4.4 70/30 Example 14 A-1 (1.4) B-4 C-1(0.76) 1b (0.2) A1/A2 = None 125 4.0 70/30 Example 15 A-2 (1.5) B-2 C-1(0.76) 1b (0.2) A1/A2 = None 110 4.2 70/30 Example 16 A-1 (1.4) B-2 C-2(0.80) 1b (0.2) A1/A2 = None 110 4.3 70/30 Example 17 A-1 (1.4) B-2 C-1(0.76) 4b (0.5) A1/A2 = None 110 4.3 70/30 Example 18 A-1 (1.4) B-2 C-1(0.76) 1b (0.2) A1/B1 = None 110 4.2 80/20 Example 19 A-1 (1.4) B-2 C-1(0.76) 1b (0.2) A1/A2 = W-1 110 4.2 70/30 Comparative A-1 (1.4) B-13 C-6(0.44) 1b (0.2) A1/B1 = W-1 60 5.8 Example 1 90/10 Comparative A-1 (1.4)B-14 C-1 (0.76) 1b (0.2) A1/A2 = None 45 5.6 Example 2 70/30 ComparativeA-3 (1.4) B-15 C-9 (0.45) 4b (0.5) A1/B1 = None 45 5.8 Example 3 90/10Comparative A-1 (1.4) B-16 C-1 (0.76) 1b (0.2) A1/A2 = None 50 5.6Example 4 70/30 Comparative A-6 (1.6) B-17 C-8 (0.50) 3b (0.3) A1/A2 =W-2 60 5.1 Example 5 70/30

In Table 2, the structures of the acid generator are as follows.

In Table 2, the structures of the resins used in Examples are asfollows.

The compositional ratios of the repeating units are molar ratios.Further, the difference (ΔOhnishi P) between the Ohnishi parameter ofthe repeating unit (b1) and the Ohnishi parameter of the repeating unit(b2), the weight-average molecular weight (Mw), and the dispersity(Mw/Mn) are shown in Table 3 below. These were determined by the samemethod as that for the above-mentioned resin B-1.

TABLE 3 Resin ΔOhnishi P Mw Mw/Mn B-1 1.20 9,300 1.64 B-2 1.45 8,7001.78 B-3 1.08 12,000 1.55 B-4 2.40 10,000 1.68 B-5 1.20 12,500 1.77 B-61.20 14,600 1.65 B-7 1.20 9,000 1.63 B-8 1.45 8,000 1.56 B-9 1.20 16,0001.66 B-10 1.45 9,500 1.58 B-11 1.80 7,800 1.65 B-12 1.33 10,000 1.75

In Table 2, the structures of the resins used in Comparative Examplesare as follows.

The compositional ratios of the repeating units are molar ratios.Further, the difference between the Ohnishi parameter of the repeatingunit (b1) and the Ohnishi parameter of the repeating unit (b2) (ΔOhnishiP), the weight-average molecular weight (Mw), and the dispersity (Mw/Mn)are shown in Table 4 below. These are determined by the same method asfor the above-mentioned resin B-1

TABLE 4 Resin ΔOhnishi P Mw Mw/Mn B-13 — 10,000 1.58 B-14 — 9,000 1.65B-15 0.25 15,000 1.54 B-16 0.29 14,500 1.68 B-17 0.50 12,000 1.77

In Table 2, the structures of the basic compounds are as follows.

In Table 2, the structures of the hydrophobic resins are as follows.

With respect to the respective hydrophobic resins, the compositionalratios (molar ratios; corresponding to the repeating units in order fromthe left side) of the respective repeating units, the weight-averagemolecular weight (Mw), and the dispersity (Mw/Mn) are shown in Table 5below. These were determined by the same method as that for theabove-mentioned resin B-1.

TABLE 5 Resin Compositional ratio(% by mole) Mw Mw/Mn (1b) 50 45 5 7,0001.3 (2b) 40 40 20  18,600 1.57 (3b) 50 50 — 25,400 1.63 (4b) 30 65 528,000 1.7 (5b) 100 — — 12,500 1.65

In Table 2, the solvents are as follows.

A1: Propylene glycol monomethyl ether acetate (PGMEA)

A2: Cyclohexanone

A3: γ-Butyrolactone

B1: Propylene glycol monomethyl ether (PGME)

B2: Ethyl lactate

In Table 2, the surfactants are as follows.

W-1: MEGAFACE F176 (manufactured by DIC, Inc.; fluorine-based)

W-2: MEGAFACE R08 (manufactured by DIC, Inc.; fluorine- andsilicon-based)

W-3: PF6320 (manufactured by OMNOVA Solutions Inc.; fluorine-based)

W-4: TROYSOL S-366 (manufactured by Troy Chemical Co., Ltd.)

As seen from Table 2, in Examples 1 to 19 using the resins B-1 to B-12in which the repeating unit (b1) and the repeating unit (b2) were usedin combination and the ΔOhnishi P was 0.85 or more, the value of DOF washigh and excellent LWR was exhibited, as compared with ComparativeExamples 1 and 2 using the resins B-13 and B-14 in which the repeatingunit (b1) and the repeating unit (b2) were not used in combination, andComparative Examples 3 to 5 using the resins B-15 to B-17 in which therepeating unit (b1) and the repeating unit (b2) were used incombination, but the ΔOhnishi P was less than 0.85.

Here, Examples 2 and 12 to 14 which had the same components as inExamples 1 to 19, except for the resins, were compared. Further, in theresins B-1, 2, 4, and 12 in Examples 2 and 12 to 14, the repeating units(a1) were the same, and the molar ratios of the repeating unit (b1) tothe repeating unit (b2) were all 20:20.

As a result of the comparison, in Example 2 using the resin B-2(ΔOhnishi P=1.45) and Example 14 using the resin B-4 (ΔOhnishi P=2.40),the DOF and the LWR were more excellent than those in Example 13 usingthe resin B-1 (ΔOhnishi P=1.20), and Example 12 using the resin B-12(ΔOhnishi P=1.33).

In addition, with respect to Examples 2 and 14, in Example 14 having ahigher ΔOhnishi P, the DOF and the LWR were more excellent than those inExample 2.

Moreover, when Examples 2 and 15 to 19 using the resin B-2 in common,but using different components except for the resin, among Examples 1 to19, were compared, the DOF and the LWR were equivalent.

In addition, in Examples 1 to 19, even in a case where a top coat havinga film thickness of 100 nm, composed of 100% by mass of the hydrophobicresin (2b), was formed on the resist film, the DOF and the LWR werefound to be excellent, as in a case of not forming the top coat.

What is claimed is:
 1. An active-light-sensitive or radiation-sensitiveresin composition comprising: a solvent; a resin (P); and a compoundthat generates an acid upon irradiation with active light or radiation,wherein the resin (P) includes: a repeating unit (a) having a group thatdecomposes by the action of an acid to generate a polar group, includingat least a repeating unit (a1) represented by the following GeneralFormula (1); a repeating unit (b1) having at least one of a lactonestructure, a sultone structure, or a carbonate structure; and arepeating unit (b2) having at least one of a lactone structure, asultone structure, or a carbonate structure, which is different from therepeating unit (b1), the repeating unit (b2) is a repeating unitrepresented by the following General Formula (2), the Ohnishi parameterof the repeating unit (b1) is larger than the Ohnishi parameter of therepeating unit (b2), and the difference between both the Ohnishiparameters is 0.85 or more,

in General Formula (1), R₁ represents a hydrogen atom or an organicgroup, R₂ represents a secondary or tertiary alkyl group, n represents apositive integer, and * represents a binding position,

in General Formula (2), R₃ represents a hydrogen atom or an organicgroup, R₄ represents a hydrogen atom, an alkyl group, a cycloalkylgroup, or a cyano group, and * represents a binding position.
 2. Theactive-light-sensitive or radiation-sensitive resin compositionaccording to claim 1, wherein the Ohnishi parameter of the repeatingunit (b1) is 4.50 or more.
 3. The active-light-sensitive orradiation-sensitive resin composition according to claim 2, wherein theOhnishi parameter of the repeating unit (b2) is 4.00 or less.
 4. Theactive-light-sensitive or radiation-sensitive resin compositionaccording to claim 2, wherein the repeating unit (1) and the repeatingunit (b2) are each a repeating unit derived from a (meth)acrylic acidderivative monomer.
 5. The active-light-sensitive or radiation-sensitiveresin composition according to claim 2, wherein the positive integerrepresented by n in General Formula (1) is
 1. 6. Theactive-light-sensitive or radiation-sensitive resin compositionaccording to claim 1, wherein the Ohnishi parameter of the repeatingunit (b2) is 4.00 or less.
 7. The active-light-sensitive orradiation-sensitive resin composition according to claim 6, wherein therepeating unit (1) and the repeating unit (b2) are each a repeating unitderived from a (meth)acrylic acid derivative monomer.
 8. Theactive-light-sensitive or radiation-sensitive resin compositionaccording to claim 6, wherein the positive integer represented by n inGeneral Formula (1) is
 1. 9. The active-light-sensitive orradiation-sensitive resin composition according to claim 1, wherein therepeating unit (b1) and the repeating unit (b2) are each a repeatingunit derived from a (meth)acrylic acid derivative monomer.
 10. Theactive-light-sensitive or radiation-sensitive resin compositionaccording to claim 9, wherein the positive integer represented by n inGeneral Formula (1) is
 1. 11. The active-light-sensitive orradiation-sensitive resin composition according to claim 1, wherein thepositive integer represented by n in General Formula (1) is
 1. 12. Theactive-light-sensitive or radiation-sensitive resin compositionaccording to claim 1, wherein R₂ in General Formula (1) represents atertiary alkyl group.
 13. The active-light-sensitive orradiation-sensitive resin composition according to claim 1, wherein thecontent of the repeating units (a1) with respect to all the repeatingunits of the resin (P) is 30% to 70% by mole.
 14. Theactive-light-sensitive or radiation-sensitive resin compositionaccording to claim 1, wherein the content of the repeating units (a1)with respect to all the repeating units of the resin (P) is 40% to 60%by mole.
 15. The active-light-sensitive or radiation-sensitive resincomposition according to claim 1, wherein the repeating unit (b1) is arepeating unit having a monocyclic lactone structure.
 16. A patternforming method comprising at least: (i) a step of forming anactive-light-sensitive or radiation-sensitive resin composition film ona substrate, using the active-light-sensitive or radiation-sensitiveresin composition according to claim 1; (ii) a step of irradiating thefilm with active light or radiation; and (iii) a step of developing thefilm irradiated with active light or radiation using a developer. 17.The pattern forming method according to claim 16, wherein the developeris a developer including an organic solvent.